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GBC856 fiches techniques PDF

GTM - PNP EPITAXIAL TRANSISTOR

Numéro de référence GBC856
Description PNP EPITAXIAL TRANSISTOR
Fabricant GTM 
Logo GTM 





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GBC856 fiche technique
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GBC856
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The GBC856 is designed for switching and AF amplifier application, suitable for automatic insertion in thick and thin-film circuits.
Package Dimensions
1/2
Absolute Maximum Ratings at Ta = 25
Parameter
Symbol
Junction Temperature
Tj
Storage Temperature
Tstg
Collector to Base Voltage
VCBO
Collector to Emitter Voltage
VCEO
Emitter to Base Voltage
VEBO
Collector Current
IC
Total Power Dissipation
PD
Characteristics at
Symbol
BVCBO
BVCEO
BVEBO
ICBO
VCE(sat)1
VCE(sat)2
VBE(sat)1
VBE(sat)2
VBE(on)1
VBE(on)2
hFE
fT
Cob
Min.
-80
-65
-5
-
-
-
-
-
-600
-
75
-
-
Ta = 25
Typ.
-
-
-
-
-75
-250
-700
-850
-
-
-
150
4.5
Max.
-
-
-
-15
-300
-650
-
-
-750
-820
800
-
-
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70 3.10
2.40 2.80
1.40 1.60
0.35 0.50
0 0.10
0.45 0.55
REF.
G
H
K
J
L
M
Millimeter
Min. Max.
1.90 REF.
1.00 1.30
0.10 0.20
0.40 -
0.85 1.15
0 10
Ratings
+150
-55 ~ +150
-80
-65
-5
-100
225
Unit
V
V
V
mA
mW
Unit
V
V
V
nA
mV
mV
mV
mV
mV
mV
MHz
pF
Test Conditions
IC=-100uA
IC=-1mA
IE=-10uA
VCB=-30V
IC=-10mA, IB=-0.5mA
IC=-100mA, IB=-5mA
IC=-10mA, IB=-0.5mA
IC=-100mA, IB=-5mA
VCE=-5V, IC=-2mA
VCE=-5V, IC=-10mA
VCE=-5V, IC=-2mA
VCE=-5V, IC=-10mA
VCB=-10V, f=1MHz

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