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GTM - NPN SILICON TRANSISTOR

Numéro de référence GBC846
Description NPN SILICON TRANSISTOR
Fabricant GTM 
Logo GTM 





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GBC846 fiche technique
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GBC846
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The GBC846 is designed for switching and AF amplifier application, suitable for automatic insertion in thick and thin-film circuits.
Package Dimensions
1/2
Absolute Maximum Ratings at Ta = 25
Parameter
Symbol
Junction Temperature
Tj
Storage Temperature
Tstg
Collector to Base Voltage
VCBO
Collector to Emitter Voltage
VCEO
Emitter to Base Voltage
VEBO
Collector Current
IC
Total Power Dissipation
PD
Characteristics at
Symbol
BVCBO
BVCEO
BVEBO
ICBO
VCE(sat)1
VCE(sat)2
VBE(sat)1
VBE(sat)2
VBE(on)1
VBE(on)2
hFE
fT
Cob
Min.
80
65
6
-
-
-
-
-
580
-
110
-
-
Ta = 25
Typ.
-
-
-
-
90
200
700
900
-
-
-
300
3.5
Max.
-
-
-
15
250
600
-
-
700
770
800
-
6
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70 3.10
2.40 2.80
1.40 1.60
0.35 0.50
0 0.10
0.45 0.55
REF.
G
H
K
J
L
M
Millimeter
Min. Max.
1.90 REF.
1.00 1.30
0.10 0.20
0.40 -
0.85 1.15
0 10
Ratings
+150
-55 ~ +150
80
65
6
100
250
Unit
V
V
V
mA
mW
Unit
V
V
V
nA
mV
mV
mV
mV
mV
mV
MHz
pF
Test Conditions
IC=100uA
IC=1mA
IE=10uA
VCB=30V
IC=10mA, IB=0.5mA
IC=100mA, IB=5mA
IC=10mA, IB=0.5mA
IC=100mA, IB=5mA
VCE=5V, IC=2mA
VCE=5V, IC=10mA
VCE=5V, IC=2mA
VCE=5V, IC=10mA
VCB=10V, f=1MHz, IE=0A

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