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GBAV152 fiches techniques PDF

GTM - SWITCHING DIODE

Numéro de référence GBAV152
Description SWITCHING DIODE
Fabricant GTM 
Logo GTM 





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GBAV152 fiche technique
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G B AV152
S U RFAC E MO U NT, S WIT C HI NG D IO DE
VOLTAGE 80V, CURRENT 0. 1A
Description
The GBAV152 is designed for ultra high speed switching application.
Package Dimensions
ISSUED DATE :2005/07/14
REVISED DATE :
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70 3.10
2.40 2.80
1.40 1.60
0.35 0.50
0 0.10
0.45 0.55
REF.
G
H
K
J
L
M
Millimeter
Min. Max.
1.90 REF.
1.00 1.30
0.10 0.20
0.40 -
0.85 1.15
0 10
Absolute Maximum Ratings (At TA = 25
Parameter
Max. Peak Reverse Voltage
Max. Reverse Voltage
Max. Average Forward Rectified Current
Non-Repetitive Peak Forward surge Current @Tp =1.0us
@Tp =1.0s
Power Dissipation
Junction Temperature
Storage Temperature
unless otherwise specified)
Symbol
Ratings
VRM 80
VR 80
Io 100
IFSM
225
500
PD 225
TJ 150
TSTG
-55 ~ +150
Unit
V
V
mA
mA
mW
Electrical Characteristics (At TA = 25 unless otherwise noted)
Characteristics
Symbol
Min.
Max.
Unit
Test Conditions
Reverse Breakdown Voltage
V(BR)R
80
-
V IR=100 A
Forward Voltage
VF - 1.2 V IF=100mA
Reverse Voltage Leakage Current
IR
-
100
nA VR=75V
Diode Capacitance
CD - 2.0 pF VR=0V, f=1.0MHz
Reverse Recovery Time (Figure 1)
trr
-
3.0
ns IF=10mA, VR=6V, RL=100 , Irr=0.1IR
1/2

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