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Datasheet GBAS40-05-PDF.HTML Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
GBA Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | GBAS16 | SWITCHING DIODE
CORPORATION
G B AS16
Description
V O LT A G E 8 5 V, C U R R E N T 2 5 0 m A
ISSUED DATE :2002/10/28 REVISED DATE :2006/06/06C
S U R F A C E M O U N T, S W I T C H I N G D I O D E
The GBAS16 is designed for high-speed switching application in hybrid thick and thin-film circui  GTM diode | | |
| 2 | GBAS40 | Schottky Barrier Diode ( SMD )
CORPORATION
G B AS 4 0 t h r u G B AS 4 0 - 0 6
V O LT A G E 4 0 V, C U R R E N T 0 . 2 A
ISSUED DATE :2003/05/05 REVISED DATE :2005/12/20B
S U R F A C E M O U N T, S C H O T T K Y B A R R I E R D I O D E
These schottky barrier diodes are designed for high speed switching app GTM diode | | |
| 3 | GBAS40-04 | Schottky Barrier Diode ( SMD )
CORPORATION
G B AS 4 0 t h r u G B AS 4 0 - 0 6
V O LT A G E 4 0 V, C U R R E N T 0 . 2 A
ISSUED DATE :2003/05/05 REVISED DATE :2005/12/20B
S U R F A C E M O U N T, S C H O T T K Y B A R R I E R D I O D E
These schottky barrier diodes are designed for high speed switching app GTM diode | | |
| 4 | GBAS40-05 | Schottky Barrier Diode ( SMD )
CORPORATION
G B AS 4 0 t h r u G B AS 4 0 - 0 6
V O LT A G E 4 0 V, C U R R E N T 0 . 2 A
ISSUED DATE :2003/05/05 REVISED DATE :2005/12/20B
S U R F A C E M O U N T, S C H O T T K Y B A R R I E R D I O D E
These schottky barrier diodes are designed for high speed switching app GTM diode | | |
| 5 | GBAS40-06 | Schottky Barrier Diode ( SMD )
CORPORATION
G B AS 4 0 t h r u G B AS 4 0 - 0 6
V O LT A G E 4 0 V, C U R R E N T 0 . 2 A
ISSUED DATE :2003/05/05 REVISED DATE :2005/12/20B
S U R F A C E M O U N T, S C H O T T K Y B A R R I E R D I O D E
These schottky barrier diodes are designed for high speed switching app GTM diode | | |
| 6 | GBAS70 | Schottky Barrier Diode ( SMD )
CORPORATION
G B AS70/ A/C/S
Description
ISSUED DATE :2003/04/10 REVISED DATE :2005/12/28B
S U R F A C E M O U N T, S C H O T T K Y B A R R I E R D I O D E V O LT A G E 7 0 V, C U R R E N T 7 0 m A
These Schottky barrier diodes are designed for high speed switching application GTM diode | | |
| 7 | GBAS70A | Schottky Barrier Diode ( SMD )
CORPORATION
G B AS70/ A/C/S
Description
ISSUED DATE :2003/04/10 REVISED DATE :2005/12/28B
S U R F A C E M O U N T, S C H O T T K Y B A R R I E R D I O D E V O LT A G E 7 0 V, C U R R E N T 7 0 m A
These Schottky barrier diodes are designed for high speed switching application GTM diode | |
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