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GB840 fiches techniques PDF

GTM - SCHOTTKY BARRIER DIODE

Numéro de référence GB840
Description SCHOTTKY BARRIER DIODE
Fabricant GTM 
Logo GTM 





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GB840 fiche technique
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ISSUED DATE :2005/05/26
REVISED DATE :
GB840
SCHOTTKY BARRIER DIODE
VO LTAG E 4 0 V, CU R R ENT 8 A RE CT I F I E R
Description
The GB840 is designed for switching power supplies, converters, free wheeling and reverse battery protection
applications.
Features
*Low forward voltage drop
*High frequency operation
Package Dimensions
TO-252
REF.
A
B
C
D
E
F
S
Millimeter
Min. Max.
6.40 6.80
5.20 5.50
6.80 7.20
2.20 2.80
2.30 REF.
0.70 0.90
0.60 0.90
REF.
G
H
J
K
L
M
R
Millimeter
Min. Max.
0.50 0.70
2.20 2.40
0.45 0.55
0 0.15
0.90 1.50
5.40 5.80
0.80 1.20
Absolute Maximum Ratings at Ta=25
Parameters
Symbol Ratings
DC Reverse Voltage
Working Peak Reverse Voltage
VR(RMS)
VRWM
40
40
Average Forward Current
IF 8
Surge Forward Current
IFSM 380
Junction Temperature
Tj -55 ~ +150
Storage Temperature
Tstg -55 ~ +175
Thermal Resistance, Junction to case
R JC
5
Unit
Condition
V
V
A 50% duty cycle @TC=119 , rectangular waveform
A 10ms Sine or 6ms Rect. pulse
/W
Electrical Characteristics
Parameters
Symbol
Reverse Voltage
Forward Voltage*
Reverse Current*
Junction Capacitance
Series Inductance
Note *: Pulse Width <300 s, Duty Cycle <2%.
VR
VF
IR
CT
LS
Ratings
min typ max
40 -
-
- - 0.53
- - 2.0
- - 900
- 10.0 -
Unit Condition
V IR=3mA, Tj=25
V IF=8A, Tj=25
mA VR=40V, Tj=25
pF
VR=5V,Tj=25
(test signal range 100KHz~1MHz)
nH Measure lead to lead 5mm form body
GB840
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