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G400SD fiches techniques PDF

GTM - SCHOTTKY BARRIER DIODE

Numéro de référence G400SD
Description SCHOTTKY BARRIER DIODE
Fabricant GTM 
Logo GTM 





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G400SD fiche technique
www.DataSheet4U.com
CORPORATION ISSUED DATE :2003/06/03
REVISED DATE :2006/05/24B
G400SD
S U RFAC E MO U NT, S C HOTT K Y B AR R I ER DIO DE
VOLTAGE 40V, CURRENT 0. 5A
Description
The G400SD is high frequency rectification for switching power supply.
Package Dimensions
SOT-23
Absolute Maximum Ratings at TA = 25
Parameter
Junction Temperature
Storage Temperature
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Peak Forward Surge Current at 8.3mSec single half sine-wave
Typical Junction Capacitance between Terminal (Note 1)
Maximum Average Forward Rectified Current
Total Power Dissipation
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70 3.10
2.40 2.80
1.40 1.60
0.35 0.50
0 0.10
0.45 0.55
REF.
G
H
K
J
L
M
Millimeter
Min. Max.
1.90 REF.
1.00 1.30
0.10 0.20
0.40 -
0.85 1.15
0° 10°
Symbol
Tj
Tstg
VRRM
VRMS
VDC
IFSM
CJ
Io
PD
Ratings
+125
-40 ~ +125
40
28
40
3.0
20
0.5
225
Unit
V
V
V
A
pF
A
mW
Electrical Characteristics (at TA = 25 unless otherwise noted)
Parameter
Symbol Min.
Typ.
Max.
Reverse Breakdown Voltage
V(BR)R
40
-
-
Maximum Instantaneous Forward Voltage
VF
-
- 550
Maximum Average Reverse Current
IR -
-
- 30
- 50
Notes: 1. Measured at 1.0 MHz and applied reverse voltage of 10 volts.
2. ESD sensitive product handling required.
Unit Test Conditions
V IR=100 A
mV IF=500mA
A VR1=10V
A VR2=30V
G400SD
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