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Numéro de référence | G2SD655 | ||
Description | Silicon NPN Epitaxial | ||
Fabricant | GTM | ||
Logo | |||
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G2SD655
CORPORATION ISSUED DATE :2004/05/24
REVISED DATE :2004/11/29B
Silicon NPN Epitaxial
Application
Low frequency power amplifier, Muting.
Package Dimensions
D
E
S1 TO-92
S E A T IN G
PLANE
b1
e1
e
b
C
REF.
A
S1
b
b1
C
Millimeter
Min. Max.
4.45 4.7
1.02 -
0.36 0.51
0.36 0.76
0.36 0.51
REF.
D
E
L
e1
e
Millimeter
Min. Max.
4.44 4.7
3.30 3.81
12.70 -
1.150 1.390
2.42 2.66
Absolute Maximum Ratings (Ta = 25 )
Parameter
Collector to Base Voltage
VCBO
Collector to Emitter Voltage
VCEO
Emitter to Base Voltage
VEBO
Collect Current(DC)
IC
Collect peak current
IC(peak)
Junction Temperature
Tj
Storage Temperature Range
Tstg
Total Power Dissipation
PD
Ratings
30
15
5
0.7
1.0
+150
-55 ~ +150
500
Unit
V
V
V
A
A
mW
Electrical Characteristics(Ta = 25 )
Symbol
Min.
Typ.
Max.
BVCBO
30 -
-
BVCEO
15 -
-
BVEBO
5- -
ICBO
- - 1.0
VBE - - 1.0
VCE(sat)
hFE1 *1
- 0.15 0.5
250 - 1200
fT - 250
Notes: 1. The G2SD655 is grouped by hFE as follows.
2. Pulse test
-
Unit
V
V
V
uA
V
V
MHz
Test Conditions
IC=10uA ,IE=0
IC=1mA,RBE=
IE=10uA,IC=0
VCB=20V, IE=0
VCE=1V,IC=150mA
IC=500mA, IB=50mA *2
VCE=1V, IC=150mA *2
VCE=1V, IC=150mA
Classification of Rank
Rank
D
Range
250-500
E
400-800
F
600-1200
G2SD655
Page: 1/3
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Pages | Pages 3 | ||
Télécharger | [ G2SD655 ] |
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