DataSheetWiki


G2SB80 fiches techniques PDF

Vishay Siliconix - Glass Passivated Single-Phase Bridge Rectifier

Numéro de référence G2SB80
Description Glass Passivated Single-Phase Bridge Rectifier
Fabricant Vishay Siliconix 
Logo Vishay Siliconix 





1 Page

No Preview Available !





G2SB80 fiche technique
www.DataSheet4U.com
New Product
G2SB20 thru G2SB80
Vishay Semiconductors
formerly General Semiconductor
Glass Passivated Single-Phase
Bridge Rectifier
Case Type GBL
Reverse Voltage 200 to 800V
Forward Current 1.5A
0.125 (3.17)
x 45 degrees
Chamfer
0.080 (2.03)
0.060 (1.50)
0.825 (20.9)
0.815 (20.7)
0.421 (10.7)
0.411 (10.4)
0.095 (2.41)
0.080 (2.03)
0.098 (2.5)
0.075 (1.9)
0.043 (1.1)
0.035 (0.9)
0.098 (2.5)
0.075 (1.9)
0.718 (18.2)
0.682 (17.3)
Lead Depth
0.022 (0.56)
0.018 (0.46)
0.040 (1.02)
0.030 (0.76)
0.210 (5.3)
0.190 (4.8)
0.022 (0.56)
0.018 (0.46)
0.140 (3.56)
0.128 (3.25)
Polarity shown on front side of case, positive lead beveled corner.
Dimensions in inches and (millimeters)
Features
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
• This series is UL listed under the Recognized
Component Index, file number E54214
• High case dielectric strength
• Ideal for printed circuit boards
• Glass passivated chip junction
• High surge current capability
• High temperature soldering guaranteed:
260°C/10 seconds, 0.375 (9.5mm) lead length,
5lbs. (2.3kg) tension
Mechanical Data
Case: Molded plastic body over passivated junctions
Terminals: Plated leads solderable per MIL-STD-750,
Method 2026
Mounting Position: Any
Weight: 0.071 oz., 2.0 g
Packaging codes/options:
1/400 EA. per Bulk Tray Stack, 4K/box
Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.
Parameter
Symbol G2SB20 G2SB60 G2SB80
Unit
Maximum repetitive peak reverse voltage
VRRM
200
600
800
V
Maximum RMS voltage
VRMS
140
420
560
V
Maximum DC blocking voltage
VDC 200 600 800
V
Maximum average forward
rectified output current at TA = 25°C
IF(AV)
1.5
A
Peak forward surge current single
sine-wave superimposed on rated load (JEDEC Method)
IFSM
80
A
Rating for fusing (t<8.3ms)
I2t 27 A2sec
Typical thermal resistance per leg
RθJA
RθJL
40
12 °C/W
Operating junction storage and temperature range
TJ, TSTG
–55 to +150
°C
Electrical Characteristics Ratings at 25°C ambient temperature unless otherwise specified.
Parameter
Symbol G2SB20 G2SB60
Maximum instantaneous forward voltage
drop per leg at 0.75 A
VF
1.00
Maximum DC reverse current at rated TA = 25°C
DC blocking voltage per leg
TA =125°C
IR
5.0
300
Note: (1) Unit mounted on P.C.B. with 0.5 x 0.5" (12 x 12mm) copper pads and 0.375” (9.5mm) lead length
Document Number 88603
21-Mar-02
G2SB80
Unit
V
µA
www.vishay.com
1

PagesPages 2
Télécharger [ G2SB80 ]


Fiche technique recommandé

No Description détaillée Fabricant
G2SB80 Glass Passivated Single-Phase Bridge Rectifier Vishay Siliconix
Vishay Siliconix

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche