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G2N5401 Datasheet دیتاشیت PDF دانلود

دیتاشیت - GTM - PNP EPITAXIAL PLANAR TRANSISTOR

شماره قطعه G2N5401
شرح مفصل PNP EPITAXIAL PLANAR TRANSISTOR
تولید کننده GTM 
آرم GTM 


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G2N5401 شرح
www.DataSheet4U.com
CORPORATION ISSUED DATE :2004/06/09
REVISED DATE :2004/11/29B
G2N5401
PNP EPITAXIAL PLANAR TANSISTOR
Description
The G2N5401 is designed for general purpose applications requiring high breakdown voltages.
Features
*Complementary to NPN Type G2N5551
*High Collector-Emitter Breakdown Voltage (VCEO=150V@IC=1mA))
Package Dimensions
D
E
S1 TO-92
S E A T IN G
PLANE
b1
e1
e
b
C
Absolute Maximum Ratings at Ta = 25
Parameter
Junction Temperature
Storage Temperature
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Characteristics at
Symbol
Tj
Tstg
VCBO
VCEO
VEBO
IC
PD
Ta = 25
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)1
*VCE(sat)2
*VBE(sat)1
*VBE(sat)2
*hFE1
*hFE2
*hFE3
fT
Cob
Min. Typ. Max.
-160
-
-
-150
-
-
-5 -
-
- - -50
- - -50
- - -0.2
- - -0.5
- - -1
- - -1
50 -
-
80 160 400
50 -
-
100 - 300
- -6
Classification Of hFE2
Rank
Range
A
80-200
N
100-240
Unit
V
V
V
nA
nA
V
mV
V
V
MHz
pF
C
160-400
REF.
A
S1
b
b1
C
Millimeter
Min. Max.
4.45 4.7
1.02 -
0.36 0.51
0.36 0.76
0.36 0.51
REF.
D
E
L
e1
e
Millimeter
Min. Max.
4.44 4.7
3.30 3.81
12.70 -
1.150 1.390
2.42 2.66
Ratings
+150
-55 ~ +150
-160
-150
-5
-600
625
Unit
V
V
V
mA
mW
Test Conditions
IC=-100uA,IE=0
IC=-1mA,IB=0
IE=-10uA,IC=0
VCB=-120V, IE=0
VEB=-3V, IC=0
IC=-10mA, IB=-1mA
IC=-50mA, IB=-5mA
IC=-10mA, IB=-1mA
IC=-50mA, IB=-5mA
VCE=-5V, IB=-1mA
VCE=-5V, IC=-10mA
VCE=-5V, IC=-50mA
VCE=-10V, IC=-10mA, f=100MHz
VCB=-10V, f=1MHz, IE=0
* Pulse Test: Pulse Width 380us, Duty Cycle 2%
G2N5401
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