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G2N3906 Datasheet دیتاشیت PDF دانلود

دیتاشیت - GTM - PNP EPITAXIAL PLANAR TRANSISTOR

شماره قطعه G2N3906
شرح مفصل PNP EPITAXIAL PLANAR TRANSISTOR
تولید کننده GTM 
آرم GTM 


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G2N3906 شرح
www.DataSheet4U.com
CORPORATION ISSUED DATE :2004/08/31
REVISED DATE :2005/06/24C
G2N3906
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The G2N3906 is designed for general purpose switching and amplifier applications.
Features
*Pb-free package are available
*Collector-Emitter Voltage: VCEO=-40V
*Collect Dissipation: Pc (max) =625mW
*Complementary to G2N3904
Package Dimensions
D
E
S1
TO-92
S E A T IN G
PLANE
b1
e1
e
b
C
REF.
A
S1
b
b1
C
Millimeter
Min. Max.
4.45 4.7
1.02 -
0.36 0.51
0.36 0.76
0.36 0.51
REF.
D
E
L
e1
e
Millimeter
Min. Max.
4.44 4.7
3.30 3.81
12.70
-
1.150 1.390
2.42 2.66
Absolute Maximum Ratings (Ta = 25 ,unless otherwise specified)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collect Current(DC)
Junction Temperature
Storage Temperature Range
Total Power Dissipation
Symbol
VCBO
VCEO
VEBO
IC
Tj
TsTG
PD
Ratings
-40
-40
-5
-200
+150
-55 ~ +150
625
Unit
V
V
V
mA
mW
Electrical Characteristics(Ta = 25
Symbol
Min.
Typ.
BVCBO
-40 -
BVCEO
-40 -
BVEBO
-5 -
ICEX
--
IEBO
--
VCE(sat)1
--
VCE(sat)2
--
VBE(sat)1
-0.65
-
VBE(sat)2
--
hFE1
60 -
hFE2
80 -
hFE3
100 -
hFE4
60 -
hFE5
fT
30 -
250 -
Cob - -
Cib - -
td - -
tr - -
tstg - -
tf - -
,unless otherwise specified)
Max.
Unit
Test Conditions
- V IC=-10uA , IE=0
- V IC=-1mA , IB=0
- V IE=-10uA, IC=0
-50 nA VCE=-30V, VEB=-3V
-50 nA VEB=-3V
-0.25
V IC=-10mA, IB=-1mA
-0.4 V IC=-50mA, IB=-5mA
-0.85
V IC=-10mA, IB=-1mA
-0.95
V IC=-50mA, IB=-5mA
- VCE=-1V, IC=-0.1mA
- VCE=-1V, IC=-1mA
300 VCE=-1V, IC=-10mA
- VCE=-1V, IC=-50mA
- VCE=-1V, IC=-100mA
-
MHz
VCE=-20V, IE=-10mA, f=100MHz
4.5 pF VCB=-10V, f=100KHz
10 pF VEB=-0.5V, f=100KHz
35 ns VCC=-3V, VBE(OFF)=-0.5V, IC=-10mA, IB1=-1mA
35 ns VCC=-3V, VBE(OFF)=-0.5V, IC=-10mA, IB1=-1mA
225 ns VCC=-3V, IC=-10mA, IB1=-IB2=-1mA
75 ns VCC=-3V, IC=-10mA, IB1=-IB2=-1mA
G2N3906
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