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NTE - Silicon NPN Transistor

Numéro de référence NTE347
Description Silicon NPN Transistor
Fabricant NTE 
Logo NTE 





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NTE347 fiche technique
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NTE347
Silicon NPN Transistor
RF Power Output
PO = 3W @ 175MHz
Description:
The NTE347 is designed for 13.6 volt, VHF large signal power amplifier applications required in mili-
tary and industrial equipment operating to 240MHz.
Features:
D Low lead inductance stripline package for easier design and increased broadband capability.
D Balanced Emitter Construction for increased Safe Operating Area. The NTE347 is designed
to withstand an Open or Shorted Load at rated Output Power.
D Specified 13.6 volt, 175MHz Characteristics
Output Power = 3.0 Watts
Minimum Gain = 8.2dB
Efficiency = 50%
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
CollectorEmitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18V
CollectorBase Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36V
EmitterBase Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.0V
Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.6A
Total
DDeveircaeteDAisbsoipvaeti2o5n°(CTA.
=
..
+25°C),
.......
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. . . . 15W
86mW/°C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65° to +200°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65° to +200°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage
CollectorEmitter Breakdown Voltage
EmitterBase Breakdown Voltage
Collector Cutoff Current
ON CHARACTERISTICS
V(BR)CEO
V(BR)CES
V(BR)CBO
V(BR)CBO
IC = 200mA, IB = 0
IC = 200mA, IB = 0
IE = 1.0mA, IC = 0
VCB = 15V, IE = 0
18 − − V
36 − − V
4.0 − − V
− − 1.0 mA
DC Current Gain
DYNAMIC CHARACTERISTICS
hFE IC = 100mA, VCE = 5.0Vdc
5.0 − − −
Output Capacitance
Cob VCB = 15V, IE = 0, f = 0.1 to 1.0 MHz 15 30 pF

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