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GTT2625 fiches techniques PDF

GTM - P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Numéro de référence GTT2625
Description P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Fabricant GTM 
Logo GTM 





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GTT2625 fiche technique
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Pb Free Plating Product
ISSUED DATE :2006/03/28
REVISED DATE :
GTT2625
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS
RDS(ON)
ID
-30V
135m
-2.3A
Description
The GTT2625 utilized advanced processing techniques to achieve the lowest possible on-resistance,
extremely efficient and cost-effectiveness device.
The GTT2625 is universally used for all commercial-industrial applications.
Features
*Low Gate Charge
*Low On-resistance
Package Dimensions
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID @TA=25
ID @TA=70
IDM
PD @TA=25
Tj, Tstg
Thermal Data
Parameter
Thermal Resistance Junction-ambient3 Max.
Symbol
Rthj-a
REF.
A
A1
A2
c
D
E
E1
Millimeter
Min. Max.
1.10 MAX.
0 0.10
0.70 1.00
0.12 REF.
2.70 3.10
2.60 3.00
1.40 1.80
REF.
L
L1
b
e
e1
Millimeter
Min. Max.
0.45 REF.
0.60 REF.
0° 10°
0.30 0.50
0.95 REF.
1.90 REF.
Ratings
-30
±12
-2.3
-2.0
-20
1.2
0.01
-55 ~ +150
Value
110
Unit
V
V
A
A
A
W
W/
Unit
/W
1/4

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