GTT2605 Datasheet PDF - GTM
| Part Number | GTT2605 | |
| Description | P-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
| Manufacturers | GTM | |
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Pb Free Plating Product
ISSUED DATE :2006/03/28
REVISED DATE :
GTT2605
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS
RDS(ON)
ID
-30V
80m
-4.0A
Description
The GTT2605 utilized advanced processing techniques to achieve the lowest possible on-resistance,
extremely efficient and cost-effectiveness device.
The GTT2605 is universally used for all commercial-industrial applications.
Features
*Fast Switching Characteristic
*Lower Gate Charge
*Small Footprint & Low Profile Package
Package Dimensions
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID @TA=25
ID @TA=70
IDM
PD @TA=25
Tj, Tstg
Thermal Data
Parameter
Thermal Resistance Junction-ambient3 Max.
Symbol
Rthj-a
REF.
A
A1
A2
c
D
E
E1
Millimeter
Min. Max.
1.10 MAX.
0 0.10
0.70 1.00
0.12 REF.
2.70 3.10
2.60 3.00
1.40 1.80
REF.
L
L1
b
e
e1
Millimeter
Min. Max.
0.45 REF.
0.60 REF.
0° 10°
0.30 0.50
0.95 REF.
1.90 REF.
Ratings
-30
±20
-4
-3.3
-20
2
0.016
-55 ~ +150
Value
62.5
Unit
V
V
A
A
A
W
W/
Unit
/W
1/4
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for GTT2605 electronic component. |
| Information | Total 4 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ GTT2605.PDF Datasheet ] | |
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Featured Datasheets
| Part Number | Description | MFRS |
| GTT2602 | The function is N-CHANNEL ENHANCEMENT MODE POWER MOSFET. GTM | |
| GTT2603 | The function is P-CHANNEL ENHANCEMENT MODE POWER MOSFET. GTM | |
| GTT2604 | The function is N-CHANNEL ENHANCEMENT MODE POWER MOSFET. GTM | |
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