GMBCP56 Datasheet PDF - GTM
| Part Number | GMBCP56 | |
| Description | NPN Silicon Transistor | |
| Manufacturers | GTM | |
| Logo |  |
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ISSUED DATE :2002/11/20
REVISED DATE :2006/01/02D
GMBCP56
NPN SILICON EPITAXIAL TRANSISTOR
Description
The GMBCP56 is designed for use in audio amplifiers and medium power amplifications.
Features
Collector-Emitter Voltage: VCEO=80V
Complementary to GMBCX53
Package Dimensions
SOT-89
Absolute Maximum Ratings at Ta = 25
Parameter
Junction Temperature
Storage Temperature Range
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collect Current(DC)
Total Power Dissipation
Symbol
Tj
TsTG
VCBO
VCEO
VEBO
IC
PD
Electrical Characteristics (Ta = 25 )
Symbol
Min.
Typ.
Max.
BVCBO
100 -
-
BVCEO
80 -
-
BVEBO
5- -
ICBO
- - 100
IEBO
- - 100
*VCE(sat)1
- - 500
*VBE(on)
- - 1000
*hFE1
63 -
-
*hFE2
63 - 250
*hFE3
40 -
-
fT
100 -
-
Classification Of hFE2
Rank
10
Range
63 - 160
16
100 - 250
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
4.4 4.6
4.05 4.25
1.50 1.70
1.30 1.50
2.40 2.60
0.89 1.20
REF.
G
H
I
J
K
L
M
Millimeter
Min. Max.
3.00 REF.
1.50 REF.
0.40 0.52
1.40 1.60
0.35 0.41
5°TYP.
0.70 REF.
Ratings
+150
-65 ~ +150
100
80
5
1
1.2
Unit
V
V
V
A
W
Unit
V
V
V
nA
nA
mV
mV
MHz
Test Conditions
IC=100uA, IE=0
IC=1mA, IB=0
IE=10uA, IC=0
VCB=30V, IE=0
VEB=5V, IC=0
IC=500mA, IB=50mA
IC=500mA, VCE=2V,
VCE=2V, IC=5mA
VCE=2V, IC=150mA
VCE=2V, IC=500mA
VCE=5V, IC=10mA
* Pulse Test: Pulse Width 380 s, Duty Cycle
2%
GMCP56
1/2
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for GMBCP56 electronic component. |
| Information | Total 2 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ GMBCP56.PDF Datasheet ] | |
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