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PDF OPE5587 Data sheet ( Hoja de datos )

Número de pieza OPE5587
Descripción High Speed GaAlAs Infrared Emitter
Fabricantes OPTEK Technologies 
Logotipo OPTEK Technologies Logotipo



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High Speed GaAlAs Infrared Emitter C
OPE5587
C
The OPE5587 is GaAlAs infrared emitting diode
that is designed for high power, low forward
voltage and high speed rise / fall time.
This device is optimized for speed and efficiency
at emission wavelength 880nm and has a high radiant
efficiency over a wide range of forward current.
This device is packaged T1-3/4 package
and has narrow beam angle with lensed package
and cup frame. Especially this device is suited
as the emitter of data transmission without cable.
DIMENSIONS(Unit : mm)
FEATURES
Ultra high-speed : 25ns rise time
880nm wavelength
Narrow beam angle
Low forward voltage
High power and high reliability
Available for pulse operating
2- 0.5
APPLICATIONS
Emitter of IrDA
IR Audio and Telephone
High speed IR communication
IR LANs
Available for wireless digital data transmission
2.5
Anode
Cathode
Tolerance : ±0.2mm
STORAGE
Condition : 5°C~35°C,R.H.60%
Terms : within 3 months from production date
Remark : Once the package is opened, the products should be used within a day.
Otherwise, it should be keeping in a damp proof box with desiccants.
* Please take proper steps in order to secure reliability and safety in required conditions and environments
for this device.
MAXIMUM RATINGSC C C CCCCCCCCCCCCCCCCC(Ta=25°C )
Item
Symbol
Rating
Unit
Power Dissipation
PDC 150
Forward current
Pulse forward current CCCCCʭ1C
IFC
IFPC
100
1.0
Reverse voltage
VRC 4.0
Operating temp.
Topr.
-25~ +85
Soldering temp. CCCCCCCCCCCCCCʭ2
Tsol.
260.
ʭ1.Duty ratio = 1/100, pulse width=0.1ms.
ʭ2.Lead Soldering Temperature (2mm from case for 5sec.).
C
EC
AC
C
°CC
°CC
ELECTRO-OPTICALCHARACTERISTICS
Item Symbol
Forward voltage
Reverse current
Capacitance
VFC
IRC
Ct
Radiant intensity
Ie
Peak emission wavelength
pC
Spectral bandwidth 50%
C
Half angle

Optical rise & fall time(10%~90%)
tr/tf
Cut off frequency
*3. 10logPo(fc MHz)/Po(0.1 MHz)=-3
C
*3
fc
Conditions
IF=50 EC
VR=4VC
f=1 C
IF=50 EC
IF=50 EC
IF=50 C
IF=50 C
IF=50 C
IFʺʲD ECEEC
ʮDD EC ʰ C
13
Min.
C
C
40
C
C
C
C
C
Typ.
1.5
C
20
90
880
45
±10
25/15
14
(Ta=25°C)
Max. Unit
2.0 V
10 µEC
C
C/
CC
CC
C deg.
C ns
C MHz

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