|
|
PDF NTE455 Data sheet ( Hoja de datos )
| Número de pieza | NTE455 | |
| Descripción | N-Channel Silicon Dual-Gate MOS Field Effect Transistor | |
| Fabricantes | NTE Electronics | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de NTE455 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
|
No Preview Available !
www.DataSheet4U.com
NTE455
N−Channel Silicon Dual−Gate MOS Field Effect Transistor
(MOSFET)
Description:
The NTE455 is an N−Channel silicon dual−gate MOSFET designed for use as an RF amplifier in UHF
TV tuners. This device is especially recommended for use in half wave length resonator type tuners.
Features:
D Low Reverse Transfer Capacitance: Crss = 0.02pF Typ
D High Power Gain: Gps = 18dB Typ
D Low Noise Figure: NF = 3.8dB Typ
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Drain−Source Voltage, VDSX . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V
Gate1−Source Voltage, VG1S . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±10V
Gate2−Source Voltage, VG2S . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±10V
Drain Current, ID . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25mA
Total Power Dissipation, PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mW
Maximum Channel Temperature, Tch . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +125°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55° to +125°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Zero−Gate Voltage Drain Current
Forward Transfer Admittance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Power Gain
Noise Figure
Gate−Source Cutoff Voltage
Gate Reverse Current
Drain−Source Breakdown Voltage
IDSS
|Yfs|
Ciss
Coss
Crss
Gps
NF
VG1S(off)
VG2S(off)
IG1SS
IG2SS
BVDSX
VDS = 10V, VG2S = 4V, VG1S = 0
VDS = 10V, VG2S = 4V, ID = 10mA, f = 1kHz
VDS = 10V, VG2S = 4V, ID = 10mA, f = 1MHz
VDS = 10V, VG2S = 4V, ID = 10mA, f = 1MHz
VDS = 10V, VG2S = 4V, ID = 10mA, f = 1MHz
VDS = 10V, VG2S = 4V, ID = 10mA, f = 900MHz
VDS = 10V, VG2S = 4V, ID = 10mA, f = 900MHz
VDS = 10V, VG2S = 4V, ID = 10µA
VDS = 0, VG1S = ±10V, VG2S = 0
VDS = 0, VG2S = ±10V, VG1S = 0
VG1S = VG2S = −2V, ID = 10µA
Min Typ Max Unit
0.5 − 8.0 mA
18 22 − ms
1.5 2.0 3.5 pF
0.5 1.1 1.5 pF
− 0.02 0.03 pF
15 18 22 dB
− 3.8 5.5 dB
− − 2.0 V
− − −0.7 V
− − ±20 nA
− − ±20 nA
20 24 − V
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet NTE455.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| NTE451 | Silicon N-Channel JFET Transistor VHF/UHF Amplifier |  NTE |
| NTE452 | Silicon N-Channel JFET Transistor VHF Amplifier / Mixer | NTE |
| NTE454 | MOSFET / N-Ch / Dual Gate / TV UHF/RF Amp / Gate Protected | NTE |
| NTE455 | N-Channel Silicon Dual-Gate MOS Field Effect Transistor | NTE Electronics |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |