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NTE Electronics - Silicon NPN Transistor RF Power

Numéro de référence NTE362
Description Silicon NPN Transistor RF Power
Fabricant NTE Electronics 
Logo NTE Electronics 





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NTE362 fiche technique
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NTE362
Silicon NPN Transistor
RF Power
Description:
The NTE362 is designed for 7.0 to 15 volts, UHF large signal amplifier applications required in industrial
and commercial FM equipment operating in the 400 to 960MHz range.
Features:
D Specified 12.5 Volt, 470MHz Characteristics Power Output = 2.0 Watts
D Minimum Gain = 9.0dB
D Efficiency = 60% Minimum
D RF ballasting provides protection against device damage due to load mismatch
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
CollectorEmitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16V
CollectorBase Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36V
EmitterBase Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V
Collector CurrentContinuous, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.4V
Total Device Dissipation (TC = +25°C, Note 1), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.0W
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65° to +200°C
Stud Torque (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.5 inlbs
Note 1. These devices are designed for RF operation. The total device dissipation rating applies
only when the devices are operated as RF amplifiers.
Note 2. For repeated assembly use 5 inlbs.
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
OFF Characteristics
CollectorEmitter Breakdown Voltage V(BR)CEO IC = 50mA, IB = 0
V(BR)CES IC = 50mA, VBE = 0
EmitterBase Breakdown Voltage
V(BR)EBO IE = 1.0mA, IC = 0
Collector Cutoff Current
ICES
ICBO
VCE = 15V, VBE = 0, TC = +55°C
VCB = 15V, IE = 0
Min Typ Max Unit
16 − − V
36 − − V
4.0 − − V
0.2 10 mA
− − 1.0

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