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Numéro de référence | NTE362 | ||
Description | Silicon NPN Transistor RF Power | ||
Fabricant | NTE Electronics | ||
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NTE362
Silicon NPN Transistor
RF Power
Description:
The NTE362 is designed for 7.0 to 15 volts, UHF large signal amplifier applications required in industrial
and commercial FM equipment operating in the 400 to 960MHz range.
Features:
D Specified 12.5 Volt, 470MHz Characteristics Power Output = 2.0 Watts
D Minimum Gain = 9.0dB
D Efficiency = 60% Minimum
D RF ballasting provides protection against device damage due to load mismatch
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16V
Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36V
Emitter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V
Collector Current−Continuous, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.4V
Total Device Dissipation (TC = +25°C, Note 1), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.0W
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65° to +200°C
Stud Torque (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.5 in−lbs
Note 1. These devices are designed for RF operation. The total device dissipation rating applies
only when the devices are operated as RF amplifiers.
Note 2. For repeated assembly use 5 in−lbs.
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
OFF Characteristics
Collector−Emitter Breakdown Voltage V(BR)CEO IC = 50mA, IB = 0
V(BR)CES IC = 50mA, VBE = 0
Emitter−Base Breakdown Voltage
V(BR)EBO IE = 1.0mA, IC = 0
Collector Cutoff Current
ICES
ICBO
VCE = 15V, VBE = 0, TC = +55°C
VCB = 15V, IE = 0
Min Typ Max Unit
16 − − V
36 − − V
4.0 − − V
− 0.2 10 mA
− − 1.0
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Pages | Pages 2 | ||
Télécharger | [ NTE362 ] |
No | Description détaillée | Fabricant |
NTE36 | Silicon Complementary Transistors AF Power Amplifier / High Current Switch | NTE |
NTE361 | Silicon NPN Transistor RF Power Output PO = 2W @ 512MHz | NTE |
NTE362 | Silicon NPN Transistor RF Power | NTE Electronics |
NTE363 | Silicon NPN Transistor RF Power Amp / PO = 4W | NTE |
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TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
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