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GT2625 fiches techniques PDF

GTM - P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Numéro de référence GT2625
Description P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Fabricant GTM 
Logo GTM 





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GT2625 fiche technique
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Pb Free Plating Product
ISSUED DATE :2005/05/18
REVISED DATE :
GT2625
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS
RDS(ON)
ID
-30V
135m
-2.3A
Description
The GT2625 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely
efficient and cost-effectiveness device.
The GT2625 is universally used for all commercial-industrial applications.
Features
*Low Gate Charge
*Low On-resistance
Package Dimensions
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID @TA=25
ID @TA=70
IDM
PD @TA=25
Tj, Tstg
Thermal Data
Parameter
Thermal Resistance Junction-ambient3 Max.
Symbol
Rthj-a
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70 3.10
2.60 3.00
1.40 1.80
0.30 0.55
0 0.10
0° 10°
REF.
G
H
I
J
K
L
Dimensions
Millimeter
1.90 REF.
1.20 REF.
0.12 REF.
0.37 REF.
0.60 REF.
0.95 REF.
Ratings
-30
12
-2.3
-2.0
-20
1.2
0.01
-55 ~ +150
Ratings
110
Unit
V
V
A
A
A
W
W/
Unit
/W
1/4

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