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GT2610 fiches techniques PDF

GTM - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Numéro de référence GT2610
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Fabricant GTM 
Logo GTM 





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GT2610 fiche technique
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Pb Free Plating Product
ISSUED DATE :2006/06/13
REVISED DATE :
GT2610
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS
RDS(ON)
ID
60V
90m
3A
Description
The GT2610 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely
efficient and cost-effectiveness device.
The GT2610 is universally used for all commercial-industrial applications.
Features
*Simple Drive Requirement
*Small Package Outline
Package Dimensions
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3, VGS@4.5V
Continuous Drain Current3, VGS@4.5V
Pulsed Drain Current1,2
Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID @TA=25
ID @TA=70
IDM
PD @TA=25
Tj, Tstg
Thermal Data
Parameter
Thermal Resistance Junction-ambient3 Max.
Symbol
Rthj-a
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70 3.10
2.60 3.00
1.40 1.80
0.30 0.55
0 0.10
0° 10°
REF.
G
H
I
J
K
L
Dimensions
Millimeter
1.90 REF.
1.20 REF.
0.12 REF.
0.37 REF.
0.60 REF.
0.95 REF.
Ratings
60
±20
3.0
2.3
10
2
0.016
-55 ~ +150
Ratings
62.5
Unit
V
V
A
A
A
W
W/
Unit
/W
GT2610
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