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PDF GT2530 Data sheet ( Hoja de datos )
| Número de pieza | GT2530 | |
| Descripción | N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
| Fabricantes | GTM | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de GT2530 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
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Pb Free Plating Product
ISSUED DATE :2006/01/23
REVISED DATE :
GT2530
N-CH BVDSS 30V
N-CH RDS(ON) 72m
N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
N-CH ID
P-CH BVDSS
3.3A
-30V
N-CH RDS(ON) 150m
Description
N-CH ID
-2.3A
The GT2530 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely
efficient and cost-effectiveness device.
The SOT-26 package is universally used for all commercial-industrial surface mount applications.
Features
*Low Gate Change
*Low On-resistance
*RoHS Compliant
Package Dimensions
Absolute Maximum Ratings
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
VDS
VGS
ID @TA=25
ID @TA=70
IDM
Total Power Dissipation
Linear Derating Factor
PD @TA=25
Operating Junction and Storage Temperature Range Tj, Tstg
Thermal Data
Parameter
Thermal Resistance Junction-ambient3
Max.
Symbol
Rthj-a
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70 3.10
2.60 3.00
1.40 1.80
0.30 0.55
0 0.10
0° 10°
REF.
G
H
I
J
K
L
Ratings
N-channel P-channel
30 -30
±20 ±20
3.3 -2.3
2.6 -1.8
10 -10
1.14
0.01
-55 ~ +150
Value
110
Dimensions
Millimeter
1.90 REF.
1.20 REF.
0.12 REF.
0.37 REF.
0.60 REF.
0.95 REF.
Unit
V
V
A
A
A
W
W/
Unit
/W
GT2530
Page: 1/7
1 page  
N-Channel
ISSUED DATE :2006/01/23
REVISED DATE :
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance
Fig 11. Transfer Characteristics
GT2530
Fig 12. Gate Charge Waveform
Page: 5/7
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet GT2530.PDF ] | |
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