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PDF GSS4511 Data sheet ( Hoja de datos )
| Número de pieza | GSS4511 | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | GTM | |
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Pb Free Plating Product
ISSUED DATE :2005/08/29
REVISED DATE :2005/09/29B
GSS4511
N-CH BVDSS 35V
N-CH RDS(ON) 25m
N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
N-CH ID
P-CH BVDSS
7.0A
-35V
N-CH RDS(ON) 40m
Description
N-CH ID
-6.1A
The GSS4511 provide the designer with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited
for low voltage applications such as DC/DC converters.
Features
*Simple Drive Requirement
*Lower On-resistance
*Fast Switching Performance
Package Dimensions
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
5.80
6.20
4.80
5.00
3.80
4.00
08
0.40
0.90
0.19
0.25
REF.
M
H
L
J
K
G
Absolute Maximum Ratings
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
VDS
VGS
ID @TA=25
ID @TA=70
IDM
PD @TA=25
Operating Junction and Storage Temperature Range Tj, Tstg
Ratings
N-channel P-channel
35 -35
20 20
7 -6.1
5.7 -5
30 -30
2.0
0.016
-55 ~ +150
Thermal Data
Parameter
Thermal Resistance Junction-ambient3
Max.
Symbol
Rthj-a
Value
62.5
Millimeter
Min. Max.
0.10
0.25
0.35
0.49
1.35
1.75
0.375 REF.
45
1.27 TYP.
Unit
V
V
A
A
A
W
W/
Unit
/W
GSS4511
Page: 1/7
1 page  
N-Channel
ISSUED DATE :2005/08/29
REVISED DATE :2005/09/29B
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
T A =25
Single Pulse
Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance
Fig 11. Transfer Characteristics
GSS4511
Fig 12. Gate Charge Waveform
Page: 5/7
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet GSS4511.PDF ] | |
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