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PDF DMV1500HD Data sheet ( Hoja de datos )

Número de pieza DMV1500HD
Descripción DAMPER + MODULATION DIODE
Fabricantes STMicroelectronics 
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No Preview Available ! DMV1500HD Hoja de datos, Descripción, Manual

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® DMV1500HD
DAMPER + MODULATION DIODE FOR CRT TV
Table 1: Main Product Characteristics
DAMPER
MODUL.
IF(AV)
IFpeak (max)
VRRM
trr (typ)
VF (typ)
VFP (typ)
6A
12 A
1500 V
150 ns
1.0 V
21 V
3A
12 A
600 V
60 ns
1.0 V
5V
FEATURES AND BENEFITS
Full kit in one package
High breakdown voltage capability
Very fast recovery diode
Specified turn on switching characteristics
Low static and peak forward voltage drop for
low dissipation
Insulated version:
Insulated voltage = 2000 VRMS
Capacitance = 7 pF
Planar technology allowing high quality and
best electrical characteristics
Outstanding performance of well proven DTV
as damper and new faster Turbo 2 600V
technology as modulation
DESCRIPTION
High voltage semiconductor especially designed
for horizontal deflection stage in standard and high
resolution video display with E/W correction.
The insulated TO-220FPAB package includes
both the DAMPER diode and the MODULATION
diode, thanks to a dedicated design.
Assembled on automated line, it offers very low
dispersion values on insulating and thermal
performances.
DAMPER
MODULATION
123
3
2
1
TO-220FPAB
DMV1500HDFD
3
1
2
TO-220FPAB FD6 Bending
DMV1500HDFD6
(optional)
Table 2: Order Codes
Part Number
DMV1500HDFD
DMV1500HDFD6
Marking
DMV1500HD
DMV1500HD
March 2005
REV. 1
1/8

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DMV1500HD pdf
DMV1500HD
Figure 11: Transient peak forward voltage
versus dIF/dt (modulation diode, typical
values)
VFP(V)
10
9 IF=IP
Tj=100°C
8
7
6
5
4
3
2
1 dIF/dt(A/µs)
0
0 20 40 60 80 100 120 140 160 180 200
Figure 12: Forward recovery time versus dIF/dt
(damper diode, typical values)
tfr(ns)
600
550
500
IF=IP
VFR=3.0V
Tj=100°C
450
400
350
300
250
200
150
100
50 dIF/dt(A/µs)
0
0 20 40 60 80 100 120 140 160 180 200
Figure 13: Forward recovery time versus dIF/dt
(modulation diode, typical values)
tfr(ns)
140
120
IF=IP
VFR=2.0V
Tj=100°C
100
80
60
40
20
dIF/dt(A/µs)
0
0 20 40 60 80 100 120 140 160 180 200
Figure 14: Relative variation of dynamic
parameters versus junction temperature
IRM, VFP, QRR [Tj]/ IRM, VFP, QRR [Tj=125°C]
1.2
1.0
0.8
VFP
0.6
IRM
0.4
QRR
0.2
0.0
25
50
Tj(°C)
75
100
125
Figure 15: Junction capacitance versus
reverse voltage applied (typical values)
C(pF)
100
F=1MHz
VOSC=30mVRMS
Tj=25°C
DAMPER diode
10 MODULATION diode
VR(V)
1
1 10 100 1000
5/8

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