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Renesas Technology - Silicon N Channel MOS FET High Speed Power Switching

Numéro de référence RJK6014DPP
Description Silicon N Channel MOS FET High Speed Power Switching
Fabricant Renesas Technology 
Logo Renesas Technology 





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RJK6014DPP fiche technique
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RJK6014DPP
Silicon N Channel MOS FET
High Speed Power Switching
Features
Low on-resistance
Low leakage current
High speed switching
Outline
RENESAS Package code: PRSS0003AB-A
(Package name: TO-220FN)
1
23
G
Absolute Maximum Ratings
Item
Symbol
Drain to source voltage
VDSS
Gate to source voltage
Drain current
Drain peak current
VGSS
IDNote4
ID
Note1
(pulse)
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Avalanche energy
Channel dissipation
IDR
IDR
Note1
(pulse)
IAPNote3
EARNote3
Pch Note2
Channel to case thermal impedance
θch-c
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. PW 10 µs, duty cycle 1%
2. Value at Tc = 25°C
3. STch = 25°C, Tch 150°C
4. Limited by maximum safe operation area
REJ03G1531-0100
Rev.1.00
Apr 17, 2007
D
1. Gate
2. Drain
3. Source
S
Ratings
600
±30
16
32
16
32
4
0.87
35
3.57
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
A
mJ
W
°C/W
°C
°C
REJ03G1531-0100 Rev.1.00 Apr 17, 2007
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