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Renesas Technology - Silicon N Channel MOS FET Power Switching

Numéro de référence HAT2204C
Description Silicon N Channel MOS FET Power Switching
Fabricant Renesas Technology 
Logo Renesas Technology 





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HAT2204C fiche technique
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HAT2204C
Silicon N Channel MOS FET
Power Switching
Features
Low on-resistance
RDS(on) = 26m typ.(at VGS = 4.5 V)
Low drive current
High density mounting
1.8 V gate drive device
Outline
RENESAS Package code: PWSF0006JA-A
(Package name: CMFPAK - 6)
234 5
DDD D
Index
band
5
4
6
3
2
1
6
G
S
1
REJ03G0448-0500
Rev.5.00
May 10, 2007
1. Source
2. Drain
3. Drain
4. Drain
5. Drain
6. Gate
Absolute Maximum Ratings
Item
Symbol
Drain to Source voltage
Gate to Source voltage
Drain current
Drain peak current
Body - Drain diode reverse Drain current
Channel dissipation
VDSS
VGSS
ID
ID
Note1
(pulse)
IDR
Pch Note2
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. PW 10 µs, duty cycle 1%
2. When using the glass epoxy board (FR4 40 x 40 x 1.6mm)
Ratings
12
±8
3.5
14
3.5
900
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
mW
°C
°C
REJ03G0448-0500 Rev.5.00 May 10, 2007
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