(PDF) HAT1065T Datasheet - Silicon P Channel MOS FET High Speed Power Switching

Número de pieza	HAT1065T
Descripción	Silicon P Channel MOS FET High Speed Power Switching
Fabricantes	Renesas Technology
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No Preview Available ! www.DataSheet4U.com HAT1065T Silicon P Channel MOS FET High Speed Power Switching Features • Low on-resistance • Capable of –4 V gate drive • High density mounting Outline RENESAS Package code: PTSP0008JB-B (Package name: TSSOP-8 <TTP-8DV> ) 87 6 5 123 4 REJ03G0161-0200 Rev.2.00 Aug 06, 2007 18 DD 45 GG S3 MOS1 S6 MOS2 1, 8 Drain 3, 6 Source 4, 5 Gate 2, 7 NC Absolute Maximum Ratings Item Symbol Ratings Drain to source voltage VDSS –200 Gate to source voltage VGSS ±15 Drain current Drain peak current ID ID(pulse)Note1 –0.25 –1 Body-drain diode reverse drain current Channel dissipation Channel dissipation IDR Pch Note2 Pch Note3 –0.25 1 1.5 Channel temperature Tch 150 Storage temperature Tstg –55 to +150 Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. 1 Drive operation ; When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10 s 3. 2 Drive operation ; When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10 s (Ta = 25°C) Unit V V A A A W W °C °C REJ03G0161-0200 Rev.2.00 Aug 06, 2007 Page 1 of 3 1 page

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