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Número de pieza | HAF2015RJ | |
Descripción | SILICON N CHANNEL MOS FET SERIES POWER SWITCHING | |
Fabricantes | Hitachi Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de HAF2015RJ (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
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HAF2015RJ
Silicon N Channel MOS FET Series
Power Switching
ADE-208-933 (Z)
1st. Edition
Dec. 2000
This FET has the over temperature shut–down capability sensing to the junction temperature. This FET has the
built–in over temperature shut–down circuit in the gate area. And this circuit operation to shut–down the gate
voltage in case of high junction temperature like applying over power consumption, over current etc.
Features
• Logic level operation (5 to 6 V Gate drive)
• High endurance capability against to the short circuit
• Built–in the over temperature shut–down circuit
• Temperature hysteresis type.
• High density mounting.
Outline
SOP-8
DD
78
2
G Gate resistor
Tmperature self
sencing
return
circuit
circuit
Gate
shutdown
circuit
MOS1
1
S
DD
56
8 7 65
1 234
4
G Gate resistor
Tmperature
sencing
circuit
self
return
circuit
Gate
shutdown
circuit
MOS2
3
S
1, 3 Source
2, 4 Gate
5, 6, 7, 8 Drain
1 page Drain to Source Saturation Voltage vs.
Gate to Source Voltage
0.25
Pulse Test
0.2
0.15
0.1
0.05
I D= 1 A
0.5 A
0.2 A
0 2 4 6 8 10
Gate to Source Voltage VGS (V)
HAF2015RJ
Static Drain to Source Sate Resistance
vs. Drain Current
500
200
VGS = 5 V
100 V GS = 10 V
50
20
Pulse Test
10
0.1 0.2 0.5 1
2
5
Drain Current I D (A)
10 20
Static Drain to Source on State Resistance
vs. Temperature
0.25
Pulse Test
I D = 1 A 0.5 A, 0.2 A
0.2
0.15
VGS = 5 V
ID=1A
0.5 A, 0.2 A
0.1
0.05
VGS = 10 V
0
-40 0 40 80 120 160
Case Temperature Tc (°C)
Forward Transfer Admittance vs.
Drain Current
10
V DS = 10 V
5 Pulse Test
Tc = -25°C
2
1
75°C
0.5
25°C
0.2
0.1
0.05 0.1 0.2 0.5 1 2
Drain Current I D (A)
5
5
5 Page |
Páginas | Total 10 Páginas | |
PDF Descargar | [ Datasheet HAF2015RJ.PDF ] |
Número de pieza | Descripción | Fabricantes |
HAF2015RJ | SILICON N CHANNEL MOS FET SERIES POWER SWITCHING | Hitachi Semiconductor |
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