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PDF GT50J327 Data sheet ( Hoja de datos )
| Número de pieza | GT50J327 | |
| Descripción | Current Resonance Inverter Switching Application | |
| Fabricantes | Toshiba Semiconductor | |
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GT50J327
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT50J327
Current Resonance Inverter Switching Application
• Enhancement mode type
• High speed : tf = 0.19 µs (typ.) (IC = 50A)
• Low saturation voltage: VCE (sat) = 1.9 V (typ.) (IC = 50A)
• FRD included between emitter and collector
• Fourth generation IGBT
• TO-3P(N) (Toshiba package name)
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-emitter voltage
Gate-emitter voltage
Continuous collector
current
@ Tc = 100°C
@ Tc = 25°C
Pulsed collector current
DC
Diode forward current
Pulsed
Collector power
dissipation
@ Tc = 100°C
@ Tc = 25°C
Junction temperature
Storage temperature range
Symbol
VCES
VGES
IC
ICP
IF
IFP
PC
Tj
Tstg
Rating
600
±25
29
50
100
20
40
56
140
150
−55 to 150
Unit
V
V
A
A
A
W
°C
°C
Thermal Characteristics
Characteristics
Thermal resistance (IGBT)
Thermal resistance (diode)
Symbol
Rth (j-c)
Rth (j-c)
Max
0.89
2.7
Unit
°C/W
°C/W
Equivalent Circuit
Marking
Unit: mm
1.Gate
2.Collector(heatsink)
3.Emitter
JEDEC
JEITA
TOSHIBA
2-16C1C
Weight: 4.6 g (typ.)
Gate
Collector
Emitter
TOSHIBA
GT50J327
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
1 2005-02-09
1 page  
GT50J327
ICmax – Tc
60
Common emitter
VGE = 15 V
50
40
30
20
10
0
25 50 75 100 125 150
Case temperature Tc (°C)
rth (t) – tw
102
Tc = 25°C
101
Diode stage
100
IGBT stage
10−1
10−2
10−3
10−5
10−4
10−3
10−2
10−1
100
101
102
Pulse width tw (s)
IF – VF
50
Common collector
VGE = 0
40
30
20
10 Tc = 125°C 25
−40
0
0 0.4 0.8 1.2 1.6 2.0
Forward voltage VF (V)
Irr, trr – IF
50 500
30 300
10
trr
5
3 Irr
1
0
100
50
Common collector
di/dt = −100 A/µs
VGE = 0
Tc = 25°C
30
10
4 8 12 16 20
Forward current IF (A)
300
100
50
30
10
5
3
1
1
Cj – VR
f = 1 MHz
Tc = 25°C
3 5 10
30 50 100
Reverse voltage VR (V)
300 500
5
Irr, trr – di/dt
200 10
trr
8
Common collector
IF = 15 A
Tc = 25°C
6
100
4
Irr
2
00
0 40 80 120 160 200
di/dt (A/µs)
2005-02-09
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet GT50J327.PDF ] | |
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