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Numéro de référence | GSMBTA14 | ||
Description | TRANSISTOR | ||
Fabricant | GTM | ||
Logo | |||
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G S M B TA1 4
ISSUED DATE :2005/08/31
REVISED DATE :2006/05/10B
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The GSMBTA14 is designed for Darlington amplifier applications.
Package Dimensions
REF.
A
A1
A2
D
E
HE
Millimeter
Min. Max.
0.80 1.10
0 0.10
0.80 1.00
1.80 2.20
1.15 1.35
1.80 2.40
REF.
L1
L
b
c
e
Q1
Millimeter
Min. Max.
0.42 REF.
0.15 0.35
0.25 0.40
0.10 0.25
0.65 REF.
0.15 BSC.
Absolute Maximum Ratings at Ta = 25
Parameter
Symbol
Junction Temperature
Tj
Storage Temperature
Tstg
Collector to Base Voltage
VCBO
Collector to Emitter Voltage
VCEO
Emitter to Base Voltage
VEBO
Collector Current
IC
Total Power Dissipation
PD
Ratings
+150
-55~+150
30
30
10
500
225
Unit
V
V
V
mA
mW
Electrical Characteristics (Ta = 25
Symbol
Min.
Typ.
BVCBO
30 -
BVCEO
30 -
BVEBO
10 -
ICBO
--
IEBO
--
*VCE(sat)
--
*VBE(on)
--
*hFE1
10K -
*hFE2
20K -
fT 125 -
Cob - -
unless otherwise noted)
Max.
Unit
Test Conditions
- V IC=100uA, IE=0
- V IC=100uA, IB=0
- V IE=10uA, IC=0
100 nA VCB=30V, IE=0
100 nA VEB=10V, IC=0
1.5 V IC=100mA, IB=0.1mA
2.0 V VCE=5V, IC=100mA
- VCE=5V, IC=10mA
- VCE=5V, IC=100mA
- MHz VCE=5V, IC=10mA, f=100MHz
6 pF VCB=10V, IE=0, f=1MHz
* Pulse Test: Pulse Width 380 s, Duty Cycle
2%
GSMBTA14
Page: 1/2
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Pages | Pages 2 | ||
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