|
|
Numéro de référence | GSMBT9015 | ||
Description | TRANSISTOR | ||
Fabricant | GTM | ||
Logo | |||
www.DataSheet4U.com
ISSUED DATE :2004/12/20
REVISED DATE :
GSMBT9015
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The GSMBT9015 is designed for use in pre-amplifier of low level and low noise.
Package Dimensions
Absolute Maximum Ratings at Ta = 25
Parameter
Symbol
Junction Temperature
Tj
Storage Temperature
Tstg
Collector to Base Voltage
VCBO
Collector to Emitter Voltage
VCEO
Emitter to Base Voltage
VEBO
Collector Current
IC
Total Power Dissipation
PD
Characteristics at
Symbol
BVCBO
BVCEO
BVEBO
Min.
-50
-45
-5
ICBO
IEBO
*VCE(sat)
*VBE(sat)
VBE(on)
*hFE
fT
Cob
-
-
-
-
-0.6
100
100
-
Ta = 25
Typ.
-
-
-
-
-
-0.20
-0.82
-0.65
200
190
4.5
Max.
-
-
-
-50
-50
-0.7
-1.0
-0.75
600
-
7
Classification Of hFE
Rank
Range
3GB
100 - 300
3GC
200 - 600
REF.
A
A1
A2
D
E
HE
Millimeter
Min. Max.
0.80 1.10
0 0.10
0.80 1.00
1.80 2.20
1.15 1.35
1.80 2.40
REF.
L1
L
b
c
e
Q1
Millimeter
Min. Max.
0.42 REF.
0.15 0.35
0.25 0.40
0.10 0.25
0.65 REF.
0.15 BSC.
Ratings
+150
-55 ~ +150
-50
-45
-5
-100
225
Unit
V
V
V
mA
mW
Unit
V
V
V
nA
nA
V
V
V
MHz
pF
Test Conditions
IC=-100uA , IE=0
IC=-1mA, IB=0
IE=-100uA, IC=0
VCB=-50V, IE=0
VEB=-5V, IC=0
IC=-100mA, IB=-5mA
IC=-100mA, IB=-5mA
VCE=-5V, IC=-2mA
VCE=-5V, IC=-1mA
VCE=-5V, IC=-10mA
VCB=-10V, f=1MHz
* Pulse Test: Pulse Width 380 s, Duty Cycle 2%
1/2
|
|||
Pages | Pages 2 | ||
Télécharger | [ GSMBT9015 ] |
No | Description détaillée | Fabricant |
GSMBT9012 | TRANSISTOR | GTM |
GSMBT9013 | TRANSISTOR | GTM |
GSMBT9014 | TRANSISTOR | GTM |
GSMBT9015 | TRANSISTOR | GTM |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
www.DataSheetWiki.com | 2020 | Contactez-nous | Recherche |