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GSMBT9014 Datasheet دیتاشیت PDF دانلود

دیتاشیت - GTM - TRANSISTOR

شماره قطعه GSMBT9014
شرح مفصل TRANSISTOR
تولید کننده GTM 
آرم GTM 


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GSMBT9014 شرح
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GSMBT9014
NPN EPITAXIAL TRANSISTOR
Description
The GSMBT9014 is designed for general purpose amplifier applications.
Package Dimensions
ISSUED DATE :2004/12/20
REVISED DATE :
Absolute Maximum Ratings at Ta = 25
Parameter
Symbol
Junction Temperature
Tj
Storage Temperature
Tstg
Collector to Base Voltage
VCBO
Collector to Emitter Voltage
VCEO
Emitter to Base Voltage
VEBO
Collector Current
IC
Total Power Dissipation
PD
Characteristics at
Symbol
BVCBO
BVCEO
BVEBO
Min.
50
45
5
ICBO
IEBO
*VCE(sat)
*VBE(sat)
VBE(on)
*hFE
fT
Cob
-
-
-
-
0.58
100
150
-
Ta = 25
Typ.
-
-
-
-
-
0.14
0.84
0.63
280
270
2.20
Max.
-
-
-
50
50
0.3
1
0.7
1000
-
3.5
Classification Of hFE
Rank
Range
3CB
100 - 300
3CC
200 - 600
REF.
A
A1
A2
D
E
HE
Millimeter
Min. Max.
0.80 1.10
0 0.10
0.80 1.00
1.80 2.20
1.15 1.35
1.80 2.40
REF.
L1
L
b
c
e
Q1
Millimeter
Min. Max.
0.42 REF.
0.15 0.35
0.25 0.40
0.10 0.25
0.65 REF.
0.15 BSC.
Ratings
+150
-55 ~ +150
50
45
5
100
225
Unit
V
V
V
mA
mW
Unit
V
V
V
nA
nA
V
V
V
MHz
pF
Test Conditions
IC=100uA , IE=0
IC=1mA, IB=0
IE=100uA, IC=0
VCB=50V, IE=0
VEB=5V, IC=0
IC=100mA, IB=5mA
IC=100mA, IB=5mA
VCE=5V, IC=2mA
VCE=5V, IC=1mA
VCE=5V, IC=10mA
VCB=10V, f=1MHz, IE=0
* Pulse Test: Pulse Width 380 s, Duty Cycle 2%
3CD
400 - 1000
1/3

قانون اساسیصفحه 3
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