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GSMBT9012 Datasheet دیتاشیت PDF دانلود

دیتاشیت - GTM - TRANSISTOR

شماره قطعه GSMBT9012
شرح مفصل TRANSISTOR
تولید کننده GTM 
آرم GTM 


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GSMBT9012 شرح
www.DataSheet4U.com
ISSUED DATE :2004/12/20
REVISED DATE :
GSMBT9012
PNP EPITAXIAL TRANSISTOR
Description
The GSMBT9012 is designed for use in 1W output amplifier of portable radios in class B push-pull operation.
Package Dimensions
Absolute Maximum Ratings at Ta = 25
Parameter
Symbol
Junction Temperature
Tj
Storage Temperature
Tstg
Collector to Base Voltage
VCBO
Collector to Emitter Voltage
VCEO
Emitter to Base Voltage
VEBO
Collector Current
IC
Total Power Dissipation
PD
Characteristics at
Symbol
BVCBO
BVCEO
BVEBO
Min.
-40
-20
-5
ICBO
IEBO
*VCE(sat)
*VBE(sat)
*VBE(on)
*hFE1
*hFE2
fT
Cob
-
-
-
-
-
112
40
100
-
Ta = 25
Typ.
-
-
-
-
-
-
-
-
180
-
-
-
Max.
-
-
-
-100
-100
-0.6
-1.2
-0.9
300
-
-
8
Classification Of hFE1
Rank
3AG
Range
112 - 166
3AH
144 - 202
REF.
A
A1
A2
D
E
HE
Millimeter
Min. Max.
0.80 1.10
0 0.10
0.80 1.00
1.80 2.20
1.15 1.35
1.80 2.40
REF.
L1
L
b
c
e
Q1
Millimeter
Min. Max.
0.42 REF.
0.15 0.35
0.25 0.40
0.10 0.25
0.65 REF.
0.15 BSC.
Ratings
+150
-55 ~ +150
-40
-20
-5
-500
225
Unit
V
V
V
mA
mW
Unit
V
V
V
nA
nA
V
V
V
MHz
pF
Test Conditions
IC=-100uA , IE=0
IC=-1mA, IB=0
IE=-100uA, IC=0
VCB=-25V, IE=0
VEB=-3V, IC=0
IC=-500mA, IB=-50mA
IC=-500mA, IB=-50mA
VCE=-1V, IC=-10mA
VCE=-1V, IC=-50mA
VCE=-1V, IC=-500mA
VCE=-1V, IC=-10mA, f=100MHz
VCB=-10V, f=1MHz
* Pulse Test: Pulse Width 380 s, Duty Cycle 2%
3AL
176 - 300
1/2

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