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PDF GSMBT4401 Data sheet ( Hoja de datos )
| Número de pieza | GSMBT4401 | |
| Descripción | TRANSISTOR | |
| Fabricantes | GTM | |
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CORPORATION ISSUED DATE :2004/12/20
REVISED DATE :
GSMBT4401
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The GSMBT4401 is designed for general purpose switching and amplifier applications.
Features
Complementary to GSMBT4403
High DC Current Gain: 100-300 at 150mA
Package Dimensions
Absolute Maximum Ratings at Ta = 25
Parameter
Junction Temperature
Storage Temperature
Collector to Base Voltage at Ta=25
Collector to Emitter Voltage at Ta=25
Emitter to Base Voltage at Ta=25
Collector Current at Ta=25
Total Power Dissipation at Ta=25
Symbol
Tj
Tstg
VCBO
VCEO
VEBO
IC
PD
Characteristics at Ta = 25
Symbol
BVCBO
BVCEO
BVEBO
ICEX
*VCE(sat)1
*VCE(sat)2
*VBE(sat)1
*VBE(sat)2
*hFE1
*hFE2
*hFE3
*hFE4
*hFE5
fT
Cob
Min.
60
40
6
-
-
-
-
-
20
40
80
100
40
250
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
100
400
750
950
1.2
-
-
-
300
-
-
6.5
REF.
A
A1
A2
D
E
HE
Millimeter
Min. Max.
0.80 1.10
0 0.10
0.80 1.00
1.80 2.20
1.15 1.35
1.80 2.40
REF.
L1
L
b
c
e
Q1
Millimeter
Min. Max.
0.42 REF.
0.15 0.35
0.25 0.40
0.10 0.25
0.65 REF.
0.15 BSC.
Ratings
+150
-55 ~ +150
60
40
6
600
250
Unit
V
V
V
mA
mW
Unit
V
V
V
nA
mV
mV
mV
V
MHz
pF
Test Conditions
IC=100uA
IC=1mA
IE=10uA
VCE=35V, VBE= 0.4V
IC=150mA, IB=15mA
IC=500mA, IB=50mA
IC=150mA, IB=15mA
IC=500mA, IB=50mA
VCE=1V, IC=0.1mA
VCE=1V, IC=1mA
VCE=1V, IC=10mA
VCE=1V, IC=150mA
VCE=2V, IC=500mA
VCE=10V, IC=20mA, f=100MHz
VCB=5V, f=1MHz
* Pulse Test: Pulse Width 380 s, Duty Cycle
2%
1/2
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet GSMBT4401.PDF ] | |
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