DataSheetWiki

GSMBT4075 Datasheet دیتاشیت PDF دانلود

دیتاشیت - GTM - TRANSISTOR

شماره قطعه GSMBT4075
شرح مفصل TRANSISTOR
تولید کننده GTM 
آرم GTM 


1 Page

		

No Preview Available !

GSMBT4075 شرح
www.DataSheet4U.com
ISSUED DATE :2005/07/22
REVISED DATE :
GSMBT4075
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The GSMBT4075 is designed for general purpose switching and amplifier applications.
Features
Excellent hFE Linearity : hFE (0.1mA)/ hFE (2mA)=0.95 (Typ.)
High hFE : hFE = 70~700
Complementary to GSMBT2014
Package Dimensions
Absolute Maximum Ratings at Ta = 25
Parameter
Symbol
Junction Temperature
Tj
Storage Temperature
Tstg
Collector to Base Voltage
VCBO
Collector to Emitter Voltage
VCEO
Emitter to Base Voltage
VEBO
Collector Current
IC
Base Current
IB
Total Power Dissipation
PD
Electrical Characteristics (Ta = 25 )
Symbol
Min. Typ. Max.
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VBE(sat)
*hFE1
*hFE2
fT
Cob
60 -
-
50 -
-
5- -
- - 100
- - 100
- - 250
- -1
70 - 700
25 -
-
80 -
-
- - 3.5
Unit
V
V
V
nA
nA
mV
V
MHz
pF
Classification Of hFE1
Rank
LO
Range
70 - 140
LY
120 - 240
REF.
A
A1
A2
D
E
HE
Millimeter
Min. Max.
0.80 1.10
0 0.10
0.80 1.00
1.80 2.20
1.15 1.35
1.80 2.40
REF.
L1
L
b
c
e
Q1
Millimeter
Min. Max.
0.42 REF.
0.15 0.35
0.25 0.40
0.10 0.25
0.65 REF.
0.15 BSC.
Ratings
+150
-55~+150
60
50
5
150
30
225
Unit
V
V
V
mA
mA
mW
Test Conditions
IC=100uA , IE=0
IC=1mA, IB=0
IE=10uA ,IC=0
VCB=60V, IE=0
VEB=5V, IC=0
IC=100mA, IB=10mA
IC=100mA, IB=10mA
VCE=6V, IC=2mA
VCE=6V, IC=150mA
VCE=10V, IC=1mA, f=100MHz
VCB=10V, IE=0, f=1MHz
* Pulse Test: Pulse Width 380 s, Duty Cycle
2%
LG
200 - 400
LB
350 - 700
1/2

قانون اساسیصفحه 2
دانلود [ GSMBT4075 دیتاشیت ]



دیتاشیت توصیه

شماره قطعه شرح مفصل تولید کنندگان
GSMBT4075 TRANSISTOR GTM
GTM
GSMBT4076 TRANSISTOR GTM
GTM

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2018   |   تماس با ما  |   جستجو