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GSMBT2014 fiches techniques PDF

GTM - TRANSISTOR

Numéro de référence GSMBT2014
Description TRANSISTOR
Fabricant GTM 
Logo GTM 





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GSMBT2014 fiche technique
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ISSUED DATE :2005/07/22
REVISED DATE :
GSMBT2014
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The GSMBT2014 is designed for general purpose switching and amplifier applications.
Features
Excellent hFE Linearity : hFE (0.1mA)/ hFE (2mA)=0.95 (Typ.)
Complementary to GSMBT4075
Package Dimensions
Absolute Maximum Ratings at Ta = 25
Parameter
Symbol
Junction Temperature
Tj
Storage Temperature
Tstg
Collector to Base Voltage
VCBO
Collector to Emitter Voltage
VCEO
Emitter to Base Voltage
VEBO
Collector Current
IC
Base Current
IB
Total Power Dissipation
PD
Electrical Characteristics (Ta = 25 )
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VBE(sat)
*hFE1
*hFE2
Min. Typ. Max.
-50 -
-
-50 -
-
-5 -
-
- - -100
- - -100
- - -300
- - -1.1
70 - 400
25 -
-
fT
80 -
-
Cob - - 7
Unit
V
V
V
nA
nA
mV
V
MHz
pF
Classification Of hFE1
Rank
SO
Range
70 - 140
SY
120 - 240
REF.
A
A1
A2
D
E
HE
Millimeter
Min. Max.
0.80 1.10
0 0.10
0.80 1.00
1.80 2.20
1.15 1.35
1.80 2.40
REF.
L1
L
b
c
e
Q1
Millimeter
Min. Max.
0.42 REF.
0.15 0.35
0.25 0.40
0.10 0.25
0.65 REF.
0.15 BSC.
Ratings
+150
-55~+150
-50
-50
-5
-150
-30
225
Unit
V
V
V
mA
mA
mW
Test Conditions
IC=-100uA , IE=0
IC=-1mA, IB=0
IE=-10uA ,IC=0
VCB=-50V, IE=0
VEB=-5V, IC=0
IC=-100mA, IB=-10mA
IC=-100mA, IB=-10mA
VCE=-6V, IC=-2mA
VCE=-6V, IC=-150mA
VCE=-10V, IC=-1mA, f=100MHz
VCB=-10V, IE=0, f=1MHz
* Pulse Test: Pulse Width 380 s, Duty Cycle
2%
SG
200 - 400
1/2

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