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GSD965AA Datasheet دیتاشیت PDF دانلود

دیتاشیت - GTM - NPN EPITAXIAL PLANAR TRANSISTOR

شماره قطعه GSD965AA
شرح مفصل NPN EPITAXIAL PLANAR TRANSISTOR
تولید کننده GTM 
آرم GTM 


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GSD965AA شرح
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GSD965AA
CORPORATION ISSUED DATE :2005/02/17
REVISED DATE :
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The GSD965AA is designed for use as AF output amplifier and flash unit.
Package Dimensions
D
E
S1
TO-92
S E A T IN G
PLANE
b1
e1
e
b
C
Absolute Maximum Ratings at Ta = 25
Collector to Base Voltage
BVCBO
Collector to Emitter Voltage
BVCEO
Emitter to Base Voltage
BVEBO
Collector Current (Continuous)
IC
Collector Current (Peak PT=10mS)
IC
Junction Temperature
Tj
Storage Temperature
Tstg
Total Power Dissipation at Ta = 25
PD
Characteristics at Ta = 25
Symbol
Min.
Typ.
BVCBO
60 -
BVCEO
30 -
BVEBO
7-
VCEV
60 -
ICBO
--
IEBO
--
*VCE(sat)
--
*hFE1
230 -
*hFE2
150 -
fT - 150
Cob - -
Max.
-
-
-
-
100
100
0.5
800
-
-
50
Classification Of hFE1
Rank
Q
Range
230-380
R
340-600
REF.
A
S1
b
b1
C
Millimeter
Min. Max.
4.45 4.7
1.02 -
0.36 0.51
0.36 0.76
0.36 0.51
REF.
D
E
L
e1
e
Millimeter
Min. Max.
4.44 4.7
3.30 3.81
12.70
-
1.150 1.390
2.42 2.66
60
30
7.0
5
8
+150
-55 ~ +150
0.75
V
V
V
A
A
W
Unit
V
V
V
V
nA
nA
V
MHz
pF
Test Conditions
IC=100uA
IC=1mA
IE=10uA
VEB=0.6V
VCB=60V
VEB=7V
IC=1A, IB=0.1A
VCE=2V, IC=0.5A
VCE=2V, IC=2A
VCE=6V, IE=50mA
VCB=20V, f=1MHz
* Pulse Test: Pulse Width 380us, Duty Cycle 2%
S
560-800
1/2

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