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Número de pieza | GSC9435M | |
Descripción | P-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
Fabricantes | GTM | |
Logotipo | ||
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Pb Free Plating Product
ISSUED DATE :2005/09/12
REVISED DATE :2006/06/01B
GSC9435M
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS
RDS(ON)
ID
-30V
55m
-5.3A
Description
The GSC9435M provide the designer with the best combination of fast switching, ruggedized device design,
low on-resistance and cost-effectiveness.
The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited
for low voltage applications such as DC/DC converters.
Features
*Simple Drive Requirement
*Lower On-resistance
*Fast Switching
Package Dimensions
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
5.80
6.20
4.80
5.00
3.80
4.00
0° 8°
0.40
0.90
0.19
0.25
REF.
M
H
L
J
K
G
Millimeter
Min. Max.
0.10
0.25
0.35
0.49
1.35
1.75
0.375 REF.
45°
1.27 TYP.
Absolute Maximum Ratings
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain Current1
Pulsed Drain Current2
Total Power Dissipation1
VGS
ID @TA=25
IDM
PD @TA=25
Linear Derating Factor
Operating Junction and Storage Temperature Range Tj, Tstg
Ratings
-30
±20
-5.3
-24
2.5
0.02
-55 ~ +150
Unit
V
V
A
A
W
W/
Thermal Data
Parameter
Thermal Resistance Junction-ambient1
Max.
Symbol
Rthj-amb
Value
50
Unit
/W
GSC9435M
Page: 1/5
1 page ISSUED DATE :2005/09/12
REVISED DATE :2006/06/01B
Fig 13. Normalized Thermal Transient Impedance Curve
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165
GSC9435M
Page: 5/5
5 Page |
Páginas | Total 5 Páginas | |
PDF Descargar | [ Datasheet GSC9435M.PDF ] |
Número de pieza | Descripción | Fabricantes |
GSC9435 | P-CHANNEL ENHANCEMENT MODE POWER MOSFET | GTM |
GSC9435M | P-CHANNEL ENHANCEMENT MODE POWER MOSFET | GTM |
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