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GSC1815 Datasheet دیتاشیت PDF دانلود

دیتاشیت - GTM - NPN SILICON TRANSISTOR

شماره قطعه GSC1815
شرح مفصل NPN SILICON TRANSISTOR
تولید کننده GTM 
آرم GTM 


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GSC1815 شرح
www.DataSheet4U.com
CORPORATION ISSUED DATE :2004/07/09
REVISED DATE :2004/11/29B
GSC1815
NPN EPITAXIAL PLANAR TANSISTOR
Description
The GSC1815 is designed for use in driver stage of AF amplifier and general purpose applications.
Features
*Complementary to GSA1015
Package Dimensions
D
E
S1 TO-92
S E A T IN G
PLANE
b1
e1
e
b
C
Absolute Maximum Ratings at Ta = 25
Parameter
Symbol
Junction Temperature
Tj
Storage Temperature
Tstg
Collector to Base Voltage
VCBO
Collector to Emitter Voltage
VCEO
Emitter to Base Voltage
VEBO
Collector Current
IC
Base Current
IB
Total Power Dissipation
PD
REF.
A
S1
b
b1
C
Millimeter
Min. Max.
4.45 4.7
1.02 -
0.36 0.51
0.36 0.76
0.36 0.51
REF.
D
E
L
e1
e
Millimeter
Min. Max.
4.44 4.7
3.30 3.81
12.70 -
1.150 1.390
2.42 2.66
Ratings
+150
-55 ~ +150
60
50
5
150
50
400
Unit
V
V
V
mA
mA
mW
Characteristics at Ta = 25
Symbol
Min.
Typ.
BVCBO
60 -
BVCEO
50 -
BVEBO
5-
ICBO
IEBO
*VCE(sat)
--
--
- 0.1
*VBE(sat)
hFE1
--
70 -
hFE2
25 -
fT 80 -
Cob - -
Max.
-
-
-
100
100
0.25
1.0
700
-
-
3.0
Classification Of hFE1
Rank
O
Range
70-140
Y
120-240
Unit
V
V
V
nA
nA
V
V
MHz
pF
Test Conditions
IC=100uA
IC=1mA
IE=10uA
VCE=60V, IE = 0
VEB=5V, Ic = 0
IC=100mA, IB=10mA
IC=100mA, IB=10mA
VCE=6V, IC=2mA
VCE=6V, IC=150mA
VCE=10V, IC=1mA, f=100MHz
VCB=10V, IE = 0,f=1MHz
* Pulse Test: Pulse Width 380us, Duty Cycle 2%
GR
200-400
L
350-700
GSC1815
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