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GSC1473A Datasheet دیتاشیت PDF دانلود

دیتاشیت - GTM - NPN SILICON TRANSISTOR

شماره قطعه GSC1473A
شرح مفصل NPN SILICON TRANSISTOR
تولید کننده GTM 
آرم GTM 


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GSC1473A شرح
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GSC1473A
NPN SILICON TRANSISTOR
Description
The GSC1473A is designed for general amplification.
Features
High Collector to Emitter Voltage VCEO
High Transition Frequency fT
Package Dimensions
D
TO-92
E
S1
ISSUED DATE :2005/04/15
REVISED DATE :2006/03/21B
S E A T IN G
PLANE
b1
e1
e
b
C
Absolute Maximum Ratings (TA=25 )
Parameter
Symbol
Collector to Base Voltage
VCBO
Collector to Emitter Voltage
VCEO
Emitter to Base Voltage
VEBO
Peak Collector Current
ICP
Collector Current (continuous)
IC
Total Device Dissipation
PD
Junction Temperature
TJ
Storage Temperature
Tstg
REF.
A
S1
b
b1
C
Millimeter
Min. Max.
4.45 4.7
1.02 -
0.36 0.51
0.36 0.76
0.36 0.51
REF.
D
E
L
e1
e
Millimeter
Min. Max.
4.44 4.7
3.30 3.81
12.70
-
1.150 1.390
2.42 2.66
Ratings
300
300
7
100
70
750
150
-55 ~ +150
Unit
V
V
V
mA
mA
mW
Electrical Characteristics (TA = 25
Symbol
Min.
Typ.
BVCBO
300 -
BVCEO
300 -
BVEBO
7-
ICEO
--
VCE(sat)
--
hFE 30 -
fT 50 80
Cob - -
unless otherwise noted)
Max.
Unit
Test Conditions
- V IC=100uA, IE=0
- V IC=1mA, IB=0
- V IE=1uA, IC=0
1 uA VCE=120V
1.2 V IC=50mA, IB=5mA
220 VCE=10V, IC=5mA
-
MHz
VCE=10V, IC=-10mA, f=200MHz
10 pF VCB=10V, f=1MHz
Classification Of hFE
Rank
hFE
P
30 ~ 100
Q
60 ~ 150
R
100 ~ 220
1/2

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