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دیتاشیت - GTM - NPN EPITAXIAL PLANAR TRANSISTOR

شماره قطعه GSC1384
شرح مفصل NPN EPITAXIAL PLANAR TRANSISTOR
تولید کننده GTM 
آرم GTM 


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GSC1384 شرح
www.DataSheet4U.com
ISSUED DATE :2003/10/24
REVISED DATE :2004/11/29B
GSC1384
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The GSC1384 is designed for power amplifier and driver.
Features
*Low collector to emitter saturation voltage VCE(sat).
*Complementary pair with GSA684
Package Dimensions
D
E
S1
TO-92
S E A T IN G
PLANE
b1
e1
e
b
C
REF.
A
S1
b
b1
C
Millimeter
Min. Max.
4.45 4.7
1.02 -
0.36 0.51
0.36 0.76
0.36 0.51
REF.
D
E
L
e1
e
Millimeter
Min. Max.
4.44 4.7
3.30 3.81
12.70 -
1.150 1.390
2.42 2.66
Absolute Maximum Ratings (Ta = 25
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collect Current(DC)
Collect Current*(Pulse)
Junction Temperature
Storage Temperature Range
Total Power Dissipation
,unless otherwise specified)
VCBO
VCEO
VEBO
IC
ICP
Tj
TsTG
PD
Ratings
60
50
5
1
1.5
+150
-55 ~ +150
1
Unit
V
V
V
A
A
W
Electrical Characteristics (Ta = 25
Symbol
Min.
Typ.
VCBO 60 -
VCEO 50 -
VEBO
5-
ICBO
--
VCE(sat)
- 200
VBE(sat)
- 0.85
*hFE1
85 160
*hFE2
50 100
fT - 200
Cob - 11
,unless otherwise specified)
Max.
Unit
Test Conditions
- V IC=10uA,IE=0
- V IC=2mA,IB=0
- V IE=10uA,IC=0
0.1 uA VCB=20V,IE=0
400 mV lC=0.5A,IB=50mA(note)
1.2 V IC=0.5A, IB=50mA(note)
340 VCE=10V,IC=500mA(note)
- VCE=5V,IC=1A(note)
-
MHz
VCE=10V,IB=-50mA,f=200MHz
20 pF VCB=10V,IE=0,f=1MHz
Note: Pulse measurement
Classification Of hFE1
Rank
Q
Range
85-170
R
120-240
S
170-340
1/3

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