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PDF NP82P04PLF Data sheet ( Hoja de datos )
| Número de pieza | NP82P04PLF | |
| Descripción | MOS FIELD EFFECT TRANSISTOR | |
| Fabricantes | NEC | |
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP82P04PLF
SWITCHING
P-CHANNEL POWER MOSFET
DESCRIPTION
The NP82P04PLF is P-channel MOS Field Effect Transistor designed for high current switching applications.
<R>
ORDERING INFORMATION
PART NUMBER
NP82P04PLF-E1-AY Note
NP82P04PLF-E2-AY Note
LEAD PLATING
Pure Sn (Tin)
PACKING
Tape 800 p/reel
Note Pb-free (This product does not contain Pb in external electrode.)
PACKAGE
TO-263 (MP-25ZP)
FEATURES
• Super low on-state resistance
RDS(on)1 = 8 mΩ MAX. (VGS = −10 V, ID = −41 A)
RDS(on)2 = 12 mΩ MAX. (VGS = −4.5 V, ID = −41 A)
• Low input capacitance
Ciss = 5000 pF TYP.
• Built-in gate protection diode
(TO-263)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
Gate to Source Voltage (VDS = 0 V)
VGSS
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note1
ID(DC)
ID(pulse)
Total Power Dissipation (TC = 25°C)
PT1
Total Power Dissipation (TA = 25°C)
PT2
Channel Temperature
Tch
Storage Temperature
Repetitive Avalanche Current Note2
Repetitive Avalanche Energy Note2
Tstg
IAR
EAR
−40
m20
m82
m246
150
1.8
175
−55 to +175
46
212
Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1%
2. Tch ≤ 150°C, VDD = −20 V, RG = 25 Ω, VGS = −20 → 0 V
V
V
A
A
W
W
°C
°C
A
mJ
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
Rth(ch-C)
Rth(ch-A)
1.0
83.3
°C/W
°C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D18718EJ2V0DS00 (2nd edition)
Date Published May 2007 NS CP(K)
Printed in Japan
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
2007
1 page  
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
20
15
10
5
0
-75
VGS = −4.5 V
−10 V
ID = −41 A
Pulsed
-25 25
75 125
Tch - Channel Temperature - °C
175
1000
SWITCHING CHARACTERISTICS
td(off)
100
tf
td(on)
10
VDD = −20 V
VGS = −10 V
RG = 0 Ω
1
-0.1 -1
tr
-10
ID - Drain Current - A
-100
-1000
-100
-10
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
VGS = −10 V
−4.5 V
0V
-1
-0.1
-0.01
0
Pulsed
0.5 1 1.5
VF(S-D) - Source to Drain Voltage - V
NP82P04PLF
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
10000
Ciss
1000
100
Coss
Crss
VGS = 0 V
f = 1 MHz
10
-0.1
-1
-10 -100
VDS - Drain to Source Voltage - V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
-40 -12
VDD = −32 V
-30 −20 V
−8 V
-9
-20
-10
0
0
-6
VGS
-3
VDS
20 40
ID = −82 A
0
60 80 100
QG - Gate Charge - nC
1000
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
100
10
di/dt = −100 A/μs
VGS = 0 V
1
-1 -10
IF - Diode Forward Current - A
-100
Data Sheet D18718EJ2V0DS
5
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet NP82P04PLF.PDF ] | |
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