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PDF NP82N06PLG Data sheet ( Hoja de datos )
| Número de pieza | NP82N06PLG | |
| Descripción | SWITCHING N-CHANNEL POWER MOS FET | |
| Fabricantes | NEC | |
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP82N06PLG
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The NP82N06PLG is N-channel MOS Field Effect Transistor designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER
LEAD PLATING
PACKING
PACKAGE
NP82N06PLG-E1-AY Note
NP82N06PLG-E2-AY Note
Pure Sn (Tin)
Tape
800 p/reel
TO-263 (MP-25ZP)
Note Pb-free (This product does not contain Pb in the external electrode.)
FEATURES
• Super low on-state resistance
RDS(on)1 = 6.7 mΩ MAX. (VGS = 10 V, ID = 41 A)
RDS(on)2 = 8.5 mΩ MAX. (VGS = 5 V, ID = 41 A)
• Low input capacitance
Ciss = 5700 pF TYP.
• Built-in gate protection diode
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
60
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note1
ID(DC)
ID(pulse)
±82
±270
Total Power Dissipation (TC = 25°C)
PT1
143
Total Power Dissipation (TA = 25°C)
PT2
1.8
Channel Temperature
Tch 175
Storage Temperature
Repetitive Avalanche Current Note2
Repetitive Avalanche Energy Note2
Tstg −55 to +175
IAR 37
EAR 137
V
V
A
A
W
W
°C
°C
A
mJ
Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1%
2. Tch ≤ 150°C, VDD = 30 V, RG = 25 Ω, VGS = 20 → 0 V, L = 100 μH
(TO-263)
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
Rth(ch-C)
Rth(ch-A)
1.05
83.3
°C/W
°C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D18777EJ1V0DS00 (1st edition)
Date Published June 2007 NS
Printed in Japan
2007
1 page  
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
14
ID = 41 A
12 Pulsed
10
VGS = 5 V
8
6 10 V
4
2
0
-100
-50 0 50 100 150
Tch - Channel Temperature - °C
200
1000
SWITCHING CHARACTERISTICS
100
td(off)
td(on)
10
VDD = 30 V
VGS = 10 V
RG = 0 Ω
1
0.1 1
tr
tf
10
ID - Drain Current - A
100
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
1000
100
10
VGS = 10 V
5V
0V
1
0.1
Pulsed
0.01
0 0.5 1 1.5
VF(S-D) - Source to Drain Voltage - V
NP82N06PLG
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
10000
Ciss
1000
Coss
VGS = 0 V
f = 1 MHz
100
0.1
1
Crss
10
VDS - Drain to Source Voltage - V
100
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
60 12
50
VDD = 48 V
30 V
12 V
40
10
8
30
20
10
0
0
6
VGS
4
VDS 2
ID = 82 A
0
20 40 60 80 100 120
QG - Gate Charge - nC
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
100
di/dt = 100 A/μs
VGS = 0 V
10
1
10
IF - Diode Forward Current - A
100
Data Sheet D18777EJ1V0DS
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet NP82N06PLG.PDF ] | |
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