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Numéro de référence | M2012G | ||
Description | HIGH BRIGHTNESS STANDARD GREEN SURFACE LIGHTING | ||
Fabricant | Micro Electronics | ||
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1 Page
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M2012G
HIGH BRIGHTNESS
MICROSTANDARD GREEN
SURFACE LIGHTING
FEATURES:
AlGaInP/GaAs Standard Green Chip
Green Diffused Lens
Low Power Requirements
Wide Viewing Angle
ABSOLUTE MAXIMUM RATINGS
Power dissipation/Chip
Continuous Forward Current/Chip
Peak Forward Current/Chip
(*Pulse Width = 1ms , Duty Ratio = 1/10)
Reverse Voltage
Operating Temperature Range
Storage Temperature Range
Solder Temperature (1/16 Inch from body)
Maximum Soldering Time(≤260°C)
(Ta=25°C)
Pd
IF
*IFP
VR
Topr
Tstg
60mW
20mA
100mA
5V
-20 to +80°C
-25 to +85°C
260℃
5 sec
ELECTRO-OPTICAL CHARACTERISTICS
(Ta=25°C)
PARAMETER
Forward Voltage/Chip
Reverse Current/Chip
Peak Wavelength
Dominant Wavelength
Spectral Line Half Width
Luminous Intensity
SYMBOL MIN TYP MAX UNIT
VF
2.1 2.8
V
IR 100 μA
λp 564 nm
λd 558 562 566 nm
Δλ 20 nm
IV 5 15
mcd
CONDITIONS
IF=20mA
VR=5V
IF=20mA
IF=20mA
IF=20mA
IF=10mA/Chip
16/5/2005
Sheet 1 of 2
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Pages | Pages 2 | ||
Télécharger | [ M2012G ] |
No | Description détaillée | Fabricant |
M2012G | HIGH BRIGHTNESS STANDARD GREEN SURFACE LIGHTING | Micro Electronics |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
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