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PDF GL9401A Data sheet ( Hoja de datos )
| Número de pieza | GL9401A | |
| Descripción | NPN SILICON PLANAR MEDIUM POWER high gain TRANSISTOR | |
| Fabricantes | GTM | |
| Logotipo |  |
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CORPORATION ISSUED DATE :2006/11/20
REVISED DATE :
GL9401A
NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR
Description
The GL9401A is designed for general purpose switching and amplifier applications.
Features
5 Amps continuous current, up to 20Amps pulse current
Low saturation voltages
High Gain
Package Dimensions
SOT-223
REF.
A
C
D
E
I
H
Millimeter
Min. Max.
6.70 7.30
2.90 3.10
0.02 0.10
0° 10°
0.60 0.80
0.25 0.35
REF.
B
J
1
2
3
4
5
Millimeter
Min. Max.
13°TYP.
2.30 REF.
6.30 6.70
6.30 6.70
3.30 3.70
3.30 3.70
1.40 1.80
Absolute Maximum Ratings at Ta = 25
Parameter
Junction Temperature
Storage Temperature
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Total Power Dissipation
Symbol
Tj
Tstg
VCBO
VCEO
VEBO
IC
ICM
PD
Ratings
+150
-55~+150
80
30
5
5
20
2.5
Unit
V
V
V
A
A
W
*The power which can be dissipated assuming the device is mounted in typical manner on a PCB with copper equal to 2 inches x 2 inches.
Electrical Characteristics (Ta = 25 , unless otherwise stated)
Symbol
Min. Typ. Max. Unit
Test Conditions
BVCBO
80 - - V IC=100uA , IE=0
*BVCES
80 - - V IC=100uA
BVCEO
30 - - V IC=10mA, IB=0
BVCEV
80 - - V IC=10uA, VEB=1V
BVEBO
5 - - V IE=100uA ,IC=0
ICBO
- - 10 nA VCB=35V, IE=0
ICES
- - 10 nA VCES=35V
IEBO
- - 10 nA VEB=4V, IC=0
*VCE(sat)1
- - 60 mV IC=500mA, IB=10mA
*VCE(sat)2
- - 100 mV IC=1A, IB=10mA
*VCE(sat)3
- - 250 mV IC=3A, IB=30mA
*VCE(sat)4
- - 330 mV IC=5A, IB=50mA
*VBE(sat)
- - 1.05 V IC=5A, IB=50mA
*VBE(on)
- - 1.0 V VCE=2V, IC=5A
*hFE1
280 -
-
VCE=2V, IC=10mA
*hFE2
300 -
-
VCE=2V, IC=0.5A
*hFE3
300 - 1200
VCE=2V, IC=1A
*hFE4
180 -
-
VCE=2V, IC=5A
GL9401A
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| PDF Descargar | [ Datasheet GL9401A.PDF ] | |
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