|
|
PDF GL359 Data sheet ( Hoja de datos )
| Número de pieza | GL359 | |
| Descripción | PNP SILICON PLANAR HIGH CURRENT TRANSISTOR | |
| Fabricantes | GTM | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de GL359 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
|
No Preview Available !
www.DataSheet4U.com
CORPORATION ISSUED DATE :2005/10/27
REVISED DATE :2005/12/09B
GL359
PNP SILICON PLANAR HIGH CURRENT TRANSISTOR
Description
The GL359 is designed for general purpose switching and amplifier applications.
Features
5 Amps continuous current, up to 10Amps peak current
Excellent gain characteristic specified up to 10Amps
Very low saturation voltages
Package Dimensions
SOT-223
REF.
A
C
D
E
I
H
Millimeter
Min. Max.
6.70 7.30
2.90 3.10
0.02 0.10
0° 10°
0.60 0.80
0.25 0.35
REF.
B
J
1
2
3
4
5
Millimeter
Min. Max.
13°TYP.
2.30 REF.
6.30 6.70
6.30 6.70
3.30 3.70
3.30 3.70
1.40 1.80
Absolute Maximum Ratings at Ta = 25
Parameter
Symbol
Ratings
Unit
Junction Temperature
Tj
+150
Storage Temperature
Tstg
-55~+150
Collector to Base Voltage
VCBO
-140
V
Collector to Emitter Voltage
VCEO
-100
V
Emitter to Base Voltage
VEBO
-6
V
Collector Current (DC)
IC
-5
A
Collector Current (Pulse)
IC
-10
A
Total Power Dissipation
PD
3
W
*The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 4
square inch minimum.
Electrical Characteristics(Ta = 25 ,unless otherwise stated)
Symbol
Min. Typ. Max. Unit
Test Conditions
BVCBO
*BVCEO
BVEBO
ICBO
ICES
IEBO
*VCE(sat)1
*VCE(sat)2
-140
-
-
V IC=-100uA , IE=0
-100
-
-
V IC=-10mA, IB=0
-6 - - V IE=-100uA ,IC=0
- - -50 nA VCB=-100V, IE=0
- - -50 nA VCES=-100V
- - -10 nA VEB=-6V, IC=0
- -20 -50 mV IC=-100mA, IB=-10mA
- -90 -115 mV IC=-1A, IB=-100mA
*VCE(sat)3
*VCE(sat)4
*VBE(sat)
*VBE(on)
*hFE1
*hFE2
*hFE3
*hFE4
*hFE5
fT
-
-160
-220
mV IC=-2A, IB=-200mA
-
-300
-420
mV IC=-4A, IB=-400mA
-
-1.01
-1.17
V IC=-4A, IB=-400mA
-
-0.925
-1.16
V VCE=-1V, IC=-4A
100 200
VCE=-1V, IC=-10mA
100 200 300
VCE=-1V, IC=-1A
50 90
VCE=-1V, IC=-3A
30 50
VCE=-1V, IC=-4A
- 15
VCE=-1V, IC=-10A
- 125 - MHz VCE=-10V, IC=-100mA, f=50MHz
GL359
Page: 1/2
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet GL359.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| GL35-00 | IN-LINE HIGH CURRENT SILICON BRIDGE RECTIFIERS(VOLTAGE - 50 to 800 Volts CURRENT - 15 to 35 Amperes) |  Pan Jit International Inc. |
| GL35-00 | IN-LINE HIGH CURRENT SILICON BRIDGE RECTIFIERS(VOLTAGE - 50 to 800 Volts CURRENT - 15 to 35 Amperes) |  TRSYS |
| GL35-01 | IN-LINE HIGH CURRENT SILICON BRIDGE RECTIFIERS(VOLTAGE - 50 to 800 Volts CURRENT - 15 to 35 Amperes) | Pan Jit International Inc. |
| GL35-01 | IN-LINE HIGH CURRENT SILICON BRIDGE RECTIFIERS(VOLTAGE - 50 to 800 Volts CURRENT - 15 to 35 Amperes) | TRSYS |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |