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GTM - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Numéro de référence GJ9915
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Fabricant GTM 
Logo GTM 





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GJ9915 fiche technique
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Pb Free Plating Product
ISSUED DATE :2005/02/21
REVISED DATE :
GJ9915
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS
RDS(ON)
ID
20V
50m
20A
Description
The GJ9915 provide the designer with the best combination of fast switching, ruggedized device design, ultra
low on-resistance and cost-effectiveness.
Features
*Low on-resistance
*Capable of 2.5V gate drive
*Low drive current
*Single Drive Requirement
Package Dimensions
TO-252
Absolute Maximum Ratings
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain Current, VGS@4.5V
Continuous Drain Current, VGS@4.5V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
VGS
ID @TC=25
ID @TC=125
IDM
PD @TC=25
Operating Junction and Storage Temperature Range Tj, Tstg
Thermal Data
Parameter
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max.
Max.
Symbol
Rthj-c
Rthj-a
REF.
A
B
C
D
E
F
S
Millimeter
Min. Max.
6.40 6.80
5.20 5.50
6.80 7.20
2.40 3.00
2.30 REF.
0.70 0.90
0.60 0.90
REF.
G
H
J
K
L
M
R
Millimeter
Min. Max.
0.50 0.70
2.20 2.40
0.45 0.55
0 0.15
0.90 1.50
5.40 5.80
0.80 1.20
Ratings
20
±12
20
16
41
26
0.2
-55 ~ +150
Unit
V
V
A
A
A
W
W/
Value
4.8
110
Unit
/W
/W
GJ9915
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