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Numéro de référence | GJ882 | ||
Description | NPN EPITAXIAL PLANAR TRANSISTOR | ||
Fabricant | GTM | ||
Logo | |||
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ISSUED DATE :2002/12/13
REVISED DATE :2005/08/10B
GJ882
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The GJ882 is designed for using in output stage of 20W amplifier, voltage regulator, DC-DC converter and
relay driver.
Package Dimensions
TO-252
Absolute Maximum Ratings at Ta = 25
Parameter
Symbol
Junction Temperature
Tj
Storage Temperature
Tstg
Collector to Base Voltage
VCBO
Collector to Emitter Voltage
VCEO
Emitter to Base Voltage
VEBO
Collector Current
IC
Collector Current (Pulse)
IC
Base Current
IB
Total Power Dissipation(TC=25 )
PD
Electrical Characteristics (Ta = 25 )
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
Min. Typ. Max.
40 -
-
30 -
-
5- -
- -1
- -1
- - 0.5
*VBE(sat)
- 12
*hFE1
*hFE2
fT
Cob
30 -
-
100 - 500
- 90 -
- 45 -
Unit
V
V
V
uA
uA
V
V
MHz
pF
Classification Of hFE2
Rank
Q
Range
100 - 200
P
160 - 320
REF.
A
B
C
D
E
F
S
Millimeter
Min. Max.
6.40 6.80
5.20 5.50
6.80 7.20
2.40 3.00
2.30 REF.
0.70 0.90
0.60 0.90
REF.
G
H
J
K
L
M
R
Millimeter
Min. Max.
0.50 0.70
2.20 2.40
0.45 0.55
0 0.15
0.90 1.50
5.40 5.80
0.80 1.20
Ratings
+150
-55~+150
40
30
5
3
7
0.6
10
Unit
V
V
V
A
A
A
W
Test Conditions
IC=100uA , IE=0
IC=1mA, IB=0
IE=10uA ,IC=0
VCB=30V, IE=0
VEB=3V, IC=0
IC=2A, IB=0.2A
IC=2A, IB=0.2A
VCE=2V, IC=20mA
VCE=2V, IC=1A
VCE=5V, IC=0.1A, f=100MHz
VCB=10V, IE=0, f=1MHz
* Pulse Test: Pulse Width 380 s, Duty Cycle
2%
E
250 - 500
GJ882
Page: 1/3
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Pages | Pages 3 | ||
Télécharger | [ GJ882 ] |
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