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PDF GJ4672 Data sheet ( Hoja de datos )
| Número de pieza | GJ4672 | |
| Descripción | NPN EPITAXIAL SILICON TRANSISTOR | |
| Fabricantes | GTM | |
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ISSUED DATE :2005/07/15
REVISED DATE :
GJ4672
NPN EPITAXIAL SILICON TRANSISTOR
Description
The GJ4672 is designed for low frequency amplifier applications.
Features
Low saturation voltage, typically VCE(sat) =0.1V at IC/IB=1A/50mA
Excellent DC current gain characteristics
Package Dimensions
TO-252
Absolute Maximum Ratings (TA=25 )
Parameter
Symbol
Collector to Base Voltage
VCBO
Collector to Emitter Voltage
VCEO
Emitter to Base Voltage
VEBO
Collector Current (DC)
IC
Collector Current (Pulse PW=10ms)
IC
Total Device Dissipation (TA=25 )
PD
Total Device Dissipation (TC=25 )
PD
Junction Temperature
TJ
Storage Temperature
Tstg
REF.
A
B
C
D
E
F
S
Millimeter
Min. Max.
6.40 6.80
5.20 5.50
6.80 7.20
2.40 3.00
2.30 REF.
0.70 0.90
0.60 0.90
REF.
G
H
J
K
L
M
R
Millimeter
Min. Max.
0.50 0.70
2.20 2.40
0.45 0.55
0 0.15
0.90 1.50
5.40 5.80
0.80 1.20
Ratings
60
50
6
2
5
1.5
10
150
-55 ~ +150
Unit
V
V
V
A
A
W
W
Electrical Characteristics (TA = 25 unless otherwise noted)
Symbol
Min. Typ. Max. Unit
Test Conditions
BVCBO
60 - - V IC=50uA, IE=0
BVCEO
50 - - V IC=1mA, IB=0
BVEBO
6 - - V IE=50uA, IC=0
ICBO
IEBO
*VCE(sat)
- - 100 nA VCB=60V, IE=0
- - 100 nA VEB=5V, IC=0
-
0.1 0.35
V IC=1A, IB=50mA
*hFE
120 - 400
VCE=2V, IC=500mA
fT - 210 - MHz VCE=2V, IE=500mA, f=100MHz
Cob - 25 - pF VCB=10V, IE=0, f=1MHz
Classification Of hFE
*Pulse Test: Pulse Width 380 s, Duty Cycle
Rank
Range
A
120 ~ 240
B
200 ~ 400
2%
GJ4672
Page: 1/2
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet GJ4672.PDF ] | |
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