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Número de pieza | 2SK4143 | |
Descripción | SWITCHING N-CHANNEL POWER MOS FET | |
Fabricantes | NEC | |
Logotipo | ||
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK4143
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK4143 is N-channel MOS Field Effect Transistor designed for high current switching applications.
FEATURES
• Low on-state resistance
RDS(on)1 = 44 mΩ MAX. (VGS = 10 V, ID = 10 A)
RDS(on)2 = 78 mΩ MAX. (VGS = 4.0 V, ID = 10 A)
• Low input capacitance
Ciss = 820 pF TYP.
• Built-in gate protection diode
ORDERING INFORMATION
PART NUMBER
LEAD PLATING
PACKING
2SK4143-S17-AY Note
Pure Sn (Tin)
Tube 50 p/tube
Note Pb-free (This product does not contain Pb in the external electrode).
PACKAGE
Isolated TO-220 typ. 2.2 g
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
Gate to Source Voltage (VDS = 0 V)
VGSS
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note1
ID(DC)
ID(pulse)
Total Power Dissipation (TC = 25°C)
Total Power Dissipation (TA = 25°C)
PT1
PT2
Channel Temperature
Tch
Storage Temperature
Single Avalanche Current Note2
Single Avalanche Energy Note2
Tstg
IAS
EAS
60
±20
±20
±50
20
2.0
150
−55 to +150
15
22.5
V
V
A
A
W
W
°C
°C
A
mJ
Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1%
2. Tch ≤ 150°C, VDD = 30 V, RG = 25 Ω, VGS = 20 → 0 V, L = 100 μH
(Isolated TO-220)
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
Rth(ch-C)
Rth(ch-A)
6.25
62.5
°C/W
°C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D18772EJ1V0DS00 (1st edition)
Date Published May 2007 NS
Printed in Japan
2007
1 page DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
120
ID = 10 A
100 Pulsed
80 VGS = 4.0 V
60
10 V
40
20
0
-75
-25 25
75 125
Tch - Channel Temperature - °C
175
SWITCHING CHARACTERISTICS
100
td(off)
tf
10 td(on)
tr
VDD = 30 V
VGS = 10 V
RG = 10 Ω
1
0.1 1
10
ID - Drain Current - A
100
1000
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
100
VGS = 10 V
10
1 0V
0.1
0.01
0
Pulsed
0.5 1 1.5
VF(S-D) - Source to Drain Voltage - V
2SK4143
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
10000
1000
Ciss
100
Coss
VGS = 0 V
f = 1 MHz
10
0.1
1
Crss
10 100
VDS - Drain to Source Voltage - V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
60 12
50 VDD = 48 V
30 V
40 12 V
10
8
30 6
VGS
20 4
10
0
0
VDS
5 10
2
ID = 20 A
0
15 20
QG - Gate Charge - nC
1000
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
100
10
di/dt = 100 A/μs
VGS = 0 V
1
0.1 1
10
IF - Diode Forward Current - A
100
Data Sheet D18772EJ1V0DS
5
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet 2SK4143.PDF ] |
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