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Numéro de référence | 2SC5023 | ||
Description | High frequency amplifier | ||
Fabricant | Hitachi Semiconductor | ||
Logo | |||
1 Page
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2SC5023
Silicon NPN Epitaxial
Application
High frequency amplifier
Features
• Excellent high frequency characteristics
fT = 1000 MHz typ
• High breakdown voltage and low output
capacitance
VCEO = 100 V, Cob = 4.5 pF typ
• Suitable for wide band video amplifier
TO–126FM
123
1. Emitter
2. Collector
3. Base
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Rating
Unit
———————————————————————————————————————————
Collector to base voltage
VCBO
100 V
———————————————————————————————————————————
Collector to emitter voltage
VCEO
100 V
———————————————————————————————————————————
Emitter to base voltage
VEBO
5
V
———————————————————————————————————————————
Collector current
IC 0.2 A
———————————————————————————————————————————
Collector peak current
ic(peak)
0.5
A
———————————————————————————————————————————
Collector power dissipation
PC
1.25 W
———————————————————————————————————————————
Collector power dissipation
PC*1
8
W
———————————————————————————————————————————
Junction temperature
Tj 150 °C
———————————————————————————————————————————
Storage temperature
Tstg
–55 to +150
°C
———————————————————————————————————————————
Note: 1. Value at TC = 25°C.
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Pages | Pages 3 | ||
Télécharger | [ 2SC5023 ] |
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