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GI1202 fiches techniques PDF

GTM CORPORATION - PNP EPITAXIAL PLANAR SILICON TRANSISTOR

Numéro de référence GI1202
Description PNP EPITAXIAL PLANAR SILICON TRANSISTOR
Fabricant GTM CORPORATION 
Logo GTM CORPORATION 





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GI1202 fiche technique
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ISSUED DATE :2005/06/07
REVISED DATE :
GI1202
PNP EPITAXIAL PLANAR SILICON TRANSISTOR
Description
The GI1202 is designed for voltage regulators, relay drivers, lamp drivers and electrical equipment applications.
Features
*Large current capacitance and wide ASO
*Low collector-to-emitter saturation voltage
*Fast switching speed
Package Dimensions
TO-251
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
6.40 6.80
5.20 5.50
6.80 7.20
7.20 7.80
2.30 REF.
0.60 0.90
REF.
G
H
J
K
L
M
Millimeter
Min. Max.
0.50 0.70
2.20 2.40
0.45 0.55
0.45 0.60
0.90 1.50
5.40 5.80
Absolute Maximum Ratings (Ta = 25 ,unless otherwise specified)
Parameter
Symbol
Ratings
Collector to Base Voltage
VCBO
-60
Collector to Emitter Voltage
VCEO
-50
Emitter to Base Voltage
VEBO
-6
Collector Current
IC -3
Collector Current(Pulse)
ICP -6
Junction Temperature
Tj +150
Storage Temperature
TsTG
-55 ~ +150
Total Power Dissipation
PD
PD(TC=25 )
1
15
Unit
V
V
V
A
A
W
W
Electrical Characteristics (Rating at Ta=25 )
Symbol
Min.
Typ.
Max.
BVCBO
-60 -
-
BVCEO
BVEBO
-50 -
-6 -
-
-
ICBO
- - -1
IEBO
*VCE(sat)1
*VBE(sat)
- - -1
-
-0.35
-0.7
-
-0.94
-1.2
*hFE1
*hFE2
fT
100 - 560
35 -
-
- 150 -
Cob - 39 -
ton (Turn-On Time)
tstg (Storage Time)
-
-
70
450
-
-
tf (Fall Time)
- 35 -
Classification Of hFE1
Rank
R
Range
100 ~ 200
S
140 ~ 280
Unit
V
V
V
uA
uA
V
V
MHz
pF
ns
ns
ns
Test Conditions
IC=-10uA, IE=0
IC=-1mA, RBE=
IE=-10uA, IC=0
VCB=-40V, IE=0
VEB=-4V, IC=0
lC=-2A, IB=-100mA
lC=-2A, IB=-100mA
VCE=-2V, IC=-100mA
VCE=-2V, IC=-3A
VCE=-10V, IC=-50mA
VCB=-10V, f=1MHz
See specified test circuit.
See specified test circuit.
See specified test circuit.
* Pulse Test: Pulse Width 380 s, Duty Cycle
2%
T
200 ~ 400
U
280 ~ 560
GI1202
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